Abstract
We report new results of nanosecond-resolution time-resolved optical reflectivity measurements, during pulsed excimer (KrF, 248 nm) laser irradiation of Si-implanted amorphous (a) silicon layers, which, together with model calculations and post-irradiation TEM measurements, have allowed us to study both the transformation of a-Si to a highly undercooled liquid phase and the subsequent ultrarapid solidification process.
Original language | English (US) |
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Title of host publication | Unknown Host Publication Title |
Publisher | Springer Verlag |
Pages | 1497-1500 |
Number of pages | 4 |
ISBN (Print) | 0387961089, 9780387961088 |
DOIs | |
State | Published - 1985 |
Externally published | Yes |
ASJC Scopus subject areas
- Engineering(all)