TIME-RESOLVED STUDIES OF ULTRARAPID SOLIDIFICATION OF HIGHLY UNDERCOOLED MOLTEN SILICON FORMED BY PULSED LASER IRRADIATION.

D. H. Lowndes; G. E. Jellison; R. F. Wood; R. Carpenter

doi:10.1007/978-1-4615-7682-2_341

TIME-RESOLVED STUDIES OF ULTRARAPID SOLIDIFICATION OF HIGHLY UNDERCOOLED MOLTEN SILICON FORMED BY PULSED LASER IRRADIATION.

D. H. Lowndes, G. E. Jellison, R. F. Wood, R. Carpenter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

We report new results of nanosecond-resolution time-resolved optical reflectivity measurements, during pulsed excimer (KrF, 248 nm) laser irradiation of Si-implanted amorphous (a) silicon layers, which, together with model calculations and post-irradiation TEM measurements, have allowed us to study both the transformation of a-Si to a highly undercooled liquid phase and the subsequent ultrarapid solidification process.

Original language	English (US)
Title of host publication	Unknown Host Publication Title
Publisher	Springer Verlag
Pages	1497-1500
Number of pages	4
ISBN (Print)	0387961089, 9780387961088
DOIs	https://doi.org/10.1007/978-1-4615-7682-2_341
State	Published - 1985
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)

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10.1007/978-1-4615-7682-2_341

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Lowndes, D. H., Jellison, G. E., Wood, R. F., & Carpenter, R. (1985). TIME-RESOLVED STUDIES OF ULTRARAPID SOLIDIFICATION OF HIGHLY UNDERCOOLED MOLTEN SILICON FORMED BY PULSED LASER IRRADIATION. In Unknown Host Publication Title (pp. 1497-1500). Springer Verlag. https://doi.org/10.1007/978-1-4615-7682-2_341

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abstract = "We report new results of nanosecond-resolution time-resolved optical reflectivity measurements, during pulsed excimer (KrF, 248 nm) laser irradiation of Si-implanted amorphous (a) silicon layers, which, together with model calculations and post-irradiation TEM measurements, have allowed us to study both the transformation of a-Si to a highly undercooled liquid phase and the subsequent ultrarapid solidification process.",

author = "Lowndes, {D. H.} and Jellison, {G. E.} and Wood, {R. F.} and R. Carpenter",

year = "1985",

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isbn = "0387961089",

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AU - Jellison, G. E.

AU - Wood, R. F.

AU - Carpenter, R.

PY - 1985

Y1 - 1985

N2 - We report new results of nanosecond-resolution time-resolved optical reflectivity measurements, during pulsed excimer (KrF, 248 nm) laser irradiation of Si-implanted amorphous (a) silicon layers, which, together with model calculations and post-irradiation TEM measurements, have allowed us to study both the transformation of a-Si to a highly undercooled liquid phase and the subsequent ultrarapid solidification process.

AB - We report new results of nanosecond-resolution time-resolved optical reflectivity measurements, during pulsed excimer (KrF, 248 nm) laser irradiation of Si-implanted amorphous (a) silicon layers, which, together with model calculations and post-irradiation TEM measurements, have allowed us to study both the transformation of a-Si to a highly undercooled liquid phase and the subsequent ultrarapid solidification process.

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