Abstract
We report new results of nanosecond-resolution time-resolved optical reflectivity measurements, during pulsed excimer (KrF, 248 nm) laser irradiation of Si-implanted amorphous (a) silicon layers, which, together with model calculations and post-irradiation TEM measurements, have allowed us to study both the transformation of a-Si to a highly undercooled liquid phase and the subsequent ultrarapid solidification process.
| Original language | English (US) |
|---|---|
| Title of host publication | Unknown Host Publication Title |
| Editors | James D. Chadi, Walter A. Harrison |
| Place of Publication | New York, NY, USA |
| Publisher | Springer-Verlag |
| Pages | 1497-1500 |
| Number of pages | 4 |
| ISBN (Print) | 0387961089 |
| State | Published - 1985 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
TIME-RESOLVED STUDIES OF ULTRARAPID SOLIDIFICATION OF HIGHLY UNDERCOOLED MOLTEN SILICON FORMED BY PULSED LASER IRRADIATION. / Lowndes, D. H.; Jellison, G. E.; Wood, R. F.; Carpenter, Ray.
Unknown Host Publication Title. ed. / James D. Chadi; Walter A. Harrison. New York, NY, USA : Springer-Verlag, 1985. p. 1497-1500.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - TIME-RESOLVED STUDIES OF ULTRARAPID SOLIDIFICATION OF HIGHLY UNDERCOOLED MOLTEN SILICON FORMED BY PULSED LASER IRRADIATION.
AU - Lowndes, D. H.
AU - Jellison, G. E.
AU - Wood, R. F.
AU - Carpenter, Ray
PY - 1985
Y1 - 1985
N2 - We report new results of nanosecond-resolution time-resolved optical reflectivity measurements, during pulsed excimer (KrF, 248 nm) laser irradiation of Si-implanted amorphous (a) silicon layers, which, together with model calculations and post-irradiation TEM measurements, have allowed us to study both the transformation of a-Si to a highly undercooled liquid phase and the subsequent ultrarapid solidification process.
AB - We report new results of nanosecond-resolution time-resolved optical reflectivity measurements, during pulsed excimer (KrF, 248 nm) laser irradiation of Si-implanted amorphous (a) silicon layers, which, together with model calculations and post-irradiation TEM measurements, have allowed us to study both the transformation of a-Si to a highly undercooled liquid phase and the subsequent ultrarapid solidification process.
UR - http://www.scopus.com/inward/record.url?scp=0022204230&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0022204230&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0022204230
SN - 0387961089
SP - 1497
EP - 1500
BT - Unknown Host Publication Title
A2 - Chadi, James D.
A2 - Harrison, Walter A.
PB - Springer-Verlag
CY - New York, NY, USA
ER -