TIME-RESOLVED STUDIES OF RAPID SOLIDIFICATION IN HIGHLY UNDERCOOLED MOLTEN SILICON.

D. H. Lowndes, G. E. Jellison, R. F. Wood, S. J. Pennycook, R. W. Carpenter

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

A KrF (248 nm) pulsed laser was used to melt 90-, 190-, and 440-nm thick amorphous silicon layers produced by Si ion implantation into (100) crystalline Si substrates. Time-resolved reflectivity measurements at two different probe wavelengths (633 nm and 1. 15 mu m) and post-irradiation TEM measurements were used to study the formation of an undercooled liquid Si phase and the subsequent solidification processes. Measurements with the infrared probe beam reveal a buried, propagating liquid layer at low laser energy densities. This liquid layer is generated in part by the release of latent heat associated with nucleation and growth process.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsD.K. Biegelsen, Charles V. Shank
PublisherMaterials Research Soc
Pages101-106
Number of pages6
ISBN (Print)0931837006
StatePublished - Dec 1 1985
Externally publishedYes

Publication series

NameMaterials Research Society Symposia Proceedings
Volume35
ISSN (Print)0272-9172

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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