@inproceedings{ecbb3c3ba4ae4042b31cb4e15a150991,
title = "TIME-RESOLVED STUDIES OF RAPID SOLIDIFICATION IN HIGHLY UNDERCOOLED MOLTEN SILICON.",
abstract = "A KrF (248 nm) pulsed laser was used to melt 90-, 190-, and 440-nm thick amorphous silicon layers produced by Si ion implantation into (100) crystalline Si substrates. Time-resolved reflectivity measurements at two different probe wavelengths (633 nm and 1. 15 mu m) and post-irradiation TEM measurements were used to study the formation of an undercooled liquid Si phase and the subsequent solidification processes. Measurements with the infrared probe beam reveal a buried, propagating liquid layer at low laser energy densities. This liquid layer is generated in part by the release of latent heat associated with nucleation and growth process.",
author = "Lowndes, {D. H.} and Jellison, {G. E.} and Wood, {R. F.} and Pennycook, {S. J.} and Carpenter, {R. W.}",
year = "1985",
language = "English (US)",
isbn = "0931837006",
series = "Materials Research Society Symposia Proceedings",
publisher = "Materials Research Soc",
pages = "101--106",
editor = "D.K. Biegelsen and Shank, {Charles V.}",
booktitle = "Materials Research Society Symposia Proceedings",
}