Time-resolved raman studies in GaAs-AlxGa1-xAS multiple quantum well structures

Kong-Thon Tsen; Shu Chen Y Tsen; H. Morkoc

doi:10.1117/12.947202

Time-resolved raman studies in GaAs-Al_xGa_1-xAS multiple quantum well structures

Kong-Thon Tsen, Shu Chen Y Tsen, H. Morkoc

Physics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Time-resolved Raman scattering has been employed to investigate phonon-phonon interactions in GaAs-Al_xGa_1-xAs multiple quantum well structures. By separately monitoring the growth as well as decay of the non-equilibrium LO phonons created by the relaxing carriers inside each type of layers, information about the hot carrier dynamics such as the population relaxation time of the LO phonons has been obtained. Our experimental results have shown that (1) phonon zone-folding plays little role in the determination of the population relaxation time of GaAs, GaAs-like and AlAs-like LO phonons; (2) hot-phonon effect should also be important in the Al_xGa_1-xAs layers of GaAs-Al_xGa_1-xAs multiple quantum well structures; (3) the average population relaxation time of the LO phonons which are active in hot-phonon effect in GaAs quantum wells is determined to be 8±lps at T⋍10K.

Original language	English (US)
Pages (from-to)	114-119
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	942
DOIs	https://doi.org/10.1117/12.947202
State	Published - Aug 22 1988

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "Time-resolved raman studies in GaAs-AlxGa1-xAS multiple quantum well structures",

abstract = "Time-resolved Raman scattering has been employed to investigate phonon-phonon interactions in GaAs-AlxGa1-xAs multiple quantum well structures. By separately monitoring the growth as well as decay of the non-equilibrium LO phonons created by the relaxing carriers inside each type of layers, information about the hot carrier dynamics such as the population relaxation time of the LO phonons has been obtained. Our experimental results have shown that (1) phonon zone-folding plays little role in the determination of the population relaxation time of GaAs, GaAs-like and AlAs-like LO phonons; (2) hot-phonon effect should also be important in the AlxGa1-xAs layers of GaAs-AlxGa1-xAs multiple quantum well structures; (3) the average population relaxation time of the LO phonons which are active in hot-phonon effect in GaAs quantum wells is determined to be 8±lps at T⋍10K.",

author = "Kong-Thon Tsen and Tsen, {Shu Chen Y} and H. Morkoc",

note = "Funding Information: The work by one of us (K.T.T.) was supported by the National Science Foundation under Grant # DMR-8718228.",

year = "1988",

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doi = "10.1117/12.947202",

language = "English (US)",

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T1 - Time-resolved raman studies in GaAs-AlxGa1-xAS multiple quantum well structures

AU - Tsen, Kong-Thon

AU - Tsen, Shu Chen Y

AU - Morkoc, H.

N1 - Funding Information: The work by one of us (K.T.T.) was supported by the National Science Foundation under Grant # DMR-8718228.

PY - 1988/8/22

Y1 - 1988/8/22

N2 - Time-resolved Raman scattering has been employed to investigate phonon-phonon interactions in GaAs-AlxGa1-xAs multiple quantum well structures. By separately monitoring the growth as well as decay of the non-equilibrium LO phonons created by the relaxing carriers inside each type of layers, information about the hot carrier dynamics such as the population relaxation time of the LO phonons has been obtained. Our experimental results have shown that (1) phonon zone-folding plays little role in the determination of the population relaxation time of GaAs, GaAs-like and AlAs-like LO phonons; (2) hot-phonon effect should also be important in the AlxGa1-xAs layers of GaAs-AlxGa1-xAs multiple quantum well structures; (3) the average population relaxation time of the LO phonons which are active in hot-phonon effect in GaAs quantum wells is determined to be 8±lps at T⋍10K.

AB - Time-resolved Raman scattering has been employed to investigate phonon-phonon interactions in GaAs-AlxGa1-xAs multiple quantum well structures. By separately monitoring the growth as well as decay of the non-equilibrium LO phonons created by the relaxing carriers inside each type of layers, information about the hot carrier dynamics such as the population relaxation time of the LO phonons has been obtained. Our experimental results have shown that (1) phonon zone-folding plays little role in the determination of the population relaxation time of GaAs, GaAs-like and AlAs-like LO phonons; (2) hot-phonon effect should also be important in the AlxGa1-xAs layers of GaAs-AlxGa1-xAs multiple quantum well structures; (3) the average population relaxation time of the LO phonons which are active in hot-phonon effect in GaAs quantum wells is determined to be 8±lps at T⋍10K.

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JF - Proceedings of SPIE - The International Society for Optical Engineering

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Time-resolved raman studies in GaAs-Al_xGa_1-xAS multiple quantum well structures

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