Time-resolved raman studies in GaAs-AlxGa1-xAS multiple quantum well structures

Kong-Thon Tsen, Shu Chen Y Tsen, H. Morkoc

Research output: Contribution to journalArticle

2 Scopus citations


Time-resolved Raman scattering has been employed to investigate phonon-phonon interactions in GaAs-AlxGa1-xAs multiple quantum well structures. By separately monitoring the growth as well as decay of the non-equilibrium LO phonons created by the relaxing carriers inside each type of layers, information about the hot carrier dynamics such as the population relaxation time of the LO phonons has been obtained. Our experimental results have shown that (1) phonon zone-folding plays little role in the determination of the population relaxation time of GaAs, GaAs-like and AlAs-like LO phonons; (2) hot-phonon effect should also be important in the AlxGa1-xAs layers of GaAs-AlxGa1-xAs multiple quantum well structures; (3) the average population relaxation time of the LO phonons which are active in hot-phonon effect in GaAs quantum wells is determined to be 8±lps at T⋍10K.

Original languageEnglish (US)
Pages (from-to)114-119
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - Aug 22 1988


ASJC Scopus subject areas

  • Applied Mathematics
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Computer Science Applications

Cite this