Time-resolved Raman scattering of nonequilibrium LO phonons in GaAs quantum wells

Kong-Thon Tsen, R. P. Joshi, D. K. Ferry, H. Morkoc

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Time-resolved resonant Raman spectroscopy has been used to study the properties of nonequilibrium GaAs LO phonons generated as a result of the cascade of photoexcited carriers in GaAs quantum wells. The average population relaxation time of these LO phonons, which are responsible for hot-phonon effects in GaAs quantum wells, is directly measured to be 81 ps at T 10 K. These experimental results should help determine quantitatively and accurately the role hot phonons play in the hot-carrier dynamics of multiple-quantum-well structures.

Original languageEnglish (US)
Pages (from-to)1446-1449
Number of pages4
JournalPhysical Review B
Issue number2
StatePublished - Jan 1 1989


ASJC Scopus subject areas

  • Condensed Matter Physics

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