Time-resolved photoluminescence of GaN nanowires of different crystallographic orientations

A. H. Chin, T. S. Ahn, H. Li, S. Vaddiraju, C. J. Bardeen, C. Z. Ning, M. K. Sunkara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Our studies of time-integrated and time-resolved photoluminescence of a-axis and c-axis GaN nanowires demonstrate that the blue-shifted ultraviolet photoluminescence in a-axis GaN nanowires relative to c-axis GaN nanowires can be attributed to surface state emission.

Original languageEnglish (US)
Title of host publication2007 Quantum Electronics and Laser Science Conference, QELS
DOIs
StatePublished - Dec 1 2007
Event2007 Quantum Electronics and Laser Science Conference, QELS - Baltimore, MD, United States
Duration: May 6 2007May 11 2007

Publication series

NameConference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series

Other

Other2007 Quantum Electronics and Laser Science Conference, QELS
CountryUnited States
CityBaltimore, MD
Period5/6/075/11/07

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Chin, A. H., Ahn, T. S., Li, H., Vaddiraju, S., Bardeen, C. J., Ning, C. Z., & Sunkara, M. K. (2007). Time-resolved photoluminescence of GaN nanowires of different crystallographic orientations. In 2007 Quantum Electronics and Laser Science Conference, QELS [4431569] (Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series). https://doi.org/10.1109/QELS.2007.4431569