Abstract
In this study it is shown that Conductive Bridging Random Access Memory (CBRAM) might be sensitive to Total Ionizing Dose (TID) depending on the manufacturing process. TID levels at which sensitivity occurs for one of the studied processes are still very high, showing that CBRAM technology is a very interesting solution for future Non Volatile Memory (NVM) technologies to be used in space.
| Original language | English (US) |
|---|---|
| Title of host publication | 2015 15th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Volume | 2015-December |
| ISBN (Electronic) | 9781509002313 |
| DOIs | |
| State | Published - Dec 24 2015 |
| Event | 15th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2015 - Moscow, Russian Federation Duration: Sep 14 2015 → Sep 18 2015 |
Other
| Other | 15th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2015 |
|---|---|
| Country | Russian Federation |
| City | Moscow |
| Period | 9/14/15 → 9/18/15 |
Fingerprint
Keywords
- Cation
- Cation
- CBRAM radiation effects
- Chalcogenide glass
- ECM
- Electrochemical metallization
- Memristors
- Nanoionic memory
- PMC
- Programmable metallization cell
- ReRAM
- Resistive switching
- Total ionizing dose
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Radiation
Cite this
TID impact on process modified CBRAM cells. / Gonzalez Velo, Yago; Mahmud, A.; Chen, W.; Taggart, J.; Barnaby, Hugh; Kozicki, Michael; Ailavajhala, M.; Holbert, Keith; Mitkova, M.
2015 15th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2015. Vol. 2015-December Institute of Electrical and Electronics Engineers Inc., 2015. 7365685.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - TID impact on process modified CBRAM cells
AU - Gonzalez Velo, Yago
AU - Mahmud, A.
AU - Chen, W.
AU - Taggart, J.
AU - Barnaby, Hugh
AU - Kozicki, Michael
AU - Ailavajhala, M.
AU - Holbert, Keith
AU - Mitkova, M.
PY - 2015/12/24
Y1 - 2015/12/24
N2 - In this study it is shown that Conductive Bridging Random Access Memory (CBRAM) might be sensitive to Total Ionizing Dose (TID) depending on the manufacturing process. TID levels at which sensitivity occurs for one of the studied processes are still very high, showing that CBRAM technology is a very interesting solution for future Non Volatile Memory (NVM) technologies to be used in space.
AB - In this study it is shown that Conductive Bridging Random Access Memory (CBRAM) might be sensitive to Total Ionizing Dose (TID) depending on the manufacturing process. TID levels at which sensitivity occurs for one of the studied processes are still very high, showing that CBRAM technology is a very interesting solution for future Non Volatile Memory (NVM) technologies to be used in space.
KW - Cation
KW - Cation
KW - CBRAM radiation effects
KW - Chalcogenide glass
KW - ECM
KW - Electrochemical metallization
KW - Memristors
KW - Nanoionic memory
KW - PMC
KW - Programmable metallization cell
KW - ReRAM
KW - Resistive switching
KW - Total ionizing dose
UR - http://www.scopus.com/inward/record.url?scp=84973301105&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84973301105&partnerID=8YFLogxK
U2 - 10.1109/RADECS.2015.7365685
DO - 10.1109/RADECS.2015.7365685
M3 - Conference contribution
VL - 2015-December
BT - 2015 15th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2015
PB - Institute of Electrical and Electronics Engineers Inc.
ER -