@inproceedings{a6c91ea0ea0d435fa41270c41ff431d8,
title = "TID impact on process modified CBRAM cells",
abstract = "In this study it is shown that Conductive Bridging Random Access Memory (CBRAM) might be sensitive to Total Ionizing Dose (TID) depending on the manufacturing process. TID levels at which sensitivity occurs for one of the studied processes are still very high, showing that CBRAM technology is a very interesting solution for future Non Volatile Memory (NVM) technologies to be used in space.",
keywords = "CBRAM radiation effects, Cation, Chalcogenide glass, ECM, Electrochemical metallization, Memristors, Nanoionic memory, PMC, Programmable metallization cell, ReRAM, Resistive switching, Total ionizing dose",
author = "{Gonzalez Velo}, Yago and A. Mahmud and W. Chen and J. Taggart and Hugh Barnaby and Michael Kozicki and M. Ailavajhala and Keith Holbert and M. Mitkova",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 15th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2015 ; Conference date: 14-09-2015 Through 18-09-2015",
year = "2015",
month = dec,
day = "24",
doi = "10.1109/RADECS.2015.7365685",
language = "English (US)",
series = "Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 15th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2015",
}