Abstract
In this study it is shown that Conductive Bridging Random Access Memory (CBRAM) might be sensitive to Total Ionizing Dose (TID) depending on the manufacturing process. TID levels at which sensitivity occurs for one of the studied processes are still very high, showing that CBRAM technology is a very interesting solution for future Non Volatile Memory (NVM) technologies to be used in space.
Original language | English (US) |
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Title of host publication | 2015 15th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2015 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Volume | 2015-December |
ISBN (Electronic) | 9781509002313 |
DOIs | |
State | Published - Dec 24 2015 |
Event | 15th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2015 - Moscow, Russian Federation Duration: Sep 14 2015 → Sep 18 2015 |
Other
Other | 15th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2015 |
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Country/Territory | Russian Federation |
City | Moscow |
Period | 9/14/15 → 9/18/15 |
Keywords
- Cation
- Cation
- CBRAM radiation effects
- Chalcogenide glass
- ECM
- Electrochemical metallization
- Memristors
- Nanoionic memory
- PMC
- Programmable metallization cell
- ReRAM
- Resistive switching
- Total ionizing dose
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Radiation