TID impact on process modified CBRAM cells

Yago Gonzalez Velo; A. Mahmud; W. Chen; J. Taggart; Hugh Barnaby; Michael Kozicki; M. Ailavajhala; Keith Holbert; M. Mitkova

doi:10.1109/RADECS.2015.7365685

TID impact on process modified CBRAM cells

Yago Gonzalez Velo, A. Mahmud, W. Chen, J. Taggart, Hugh Barnaby, Michael Kozicki, M. Ailavajhala, Keith Holbert, M. Mitkova

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

In this study it is shown that Conductive Bridging Random Access Memory (CBRAM) might be sensitive to Total Ionizing Dose (TID) depending on the manufacturing process. TID levels at which sensitivity occurs for one of the studied processes are still very high, showing that CBRAM technology is a very interesting solution for future Non Volatile Memory (NVM) technologies to be used in space.

Original language	English (US)
Title of host publication	2015 15th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Volume	2015-December
ISBN (Electronic)	9781509002313
DOIs	https://doi.org/10.1109/RADECS.2015.7365685
State	Published - Dec 24 2015
Event	15th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2015 - Moscow, Russian Federation Duration: Sep 14 2015 → Sep 18 2015

Other

Other	15th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2015
Country	Russian Federation
City	Moscow
Period	9/14/15 → 9/18/15

Keywords

Cation
Cation
CBRAM radiation effects
Chalcogenide glass
ECM
Electrochemical metallization
Memristors
Nanoionic memory
PMC
Programmable metallization cell
ReRAM
Resistive switching
Total ionizing dose

ASJC Scopus subject areas

Electrical and Electronic Engineering
Radiation

Access to Document

10.1109/RADECS.2015.7365685

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Cite this

Gonzalez Velo, Y., Mahmud, A., Chen, W., Taggart, J., Barnaby, H., Kozicki, M., Ailavajhala, M., Holbert, K., & Mitkova, M. (2015). TID impact on process modified CBRAM cells. In 2015 15th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2015 (Vol. 2015-December). [7365685] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RADECS.2015.7365685

TID impact on process modified CBRAM cells. / Gonzalez Velo, Yago; Mahmud, A.; Chen, W.; Taggart, J.; Barnaby, Hugh ; Kozicki, Michael; Ailavajhala, M.; Holbert, Keith; Mitkova, M.

2015 15th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2015. Vol. 2015-December Institute of Electrical and Electronics Engineers Inc., 2015. 7365685.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Gonzalez Velo, Y, Mahmud, A, Chen, W, Taggart, J, Barnaby, H , Kozicki, M, Ailavajhala, M, Holbert, K & Mitkova, M 2015, TID impact on process modified CBRAM cells. in 2015 15th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2015. vol. 2015-December, 7365685, Institute of Electrical and Electronics Engineers Inc., 15th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2015, Moscow, Russian Federation, 9/14/15. https://doi.org/10.1109/RADECS.2015.7365685

Gonzalez Velo, Yago ; Mahmud, A. ; Chen, W. ; Taggart, J. ; Barnaby, Hugh ; Kozicki, Michael ; Ailavajhala, M. ; Holbert, Keith ; Mitkova, M. / TID impact on process modified CBRAM cells. 2015 15th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2015. Vol. 2015-December Institute of Electrical and Electronics Engineers Inc., 2015.

@inproceedings{a6c91ea0ea0d435fa41270c41ff431d8,

title = "TID impact on process modified CBRAM cells",

abstract = "In this study it is shown that Conductive Bridging Random Access Memory (CBRAM) might be sensitive to Total Ionizing Dose (TID) depending on the manufacturing process. TID levels at which sensitivity occurs for one of the studied processes are still very high, showing that CBRAM technology is a very interesting solution for future Non Volatile Memory (NVM) technologies to be used in space.",

keywords = "Cation, Cation, CBRAM radiation effects, Chalcogenide glass, ECM, Electrochemical metallization, Memristors, Nanoionic memory, PMC, Programmable metallization cell, ReRAM, Resistive switching, Total ionizing dose",

author = "{Gonzalez Velo}, Yago and A. Mahmud and W. Chen and J. Taggart and Hugh Barnaby and Michael Kozicki and M. Ailavajhala and Keith Holbert and M. Mitkova",

year = "2015",

month = dec,

day = "24",

doi = "10.1109/RADECS.2015.7365685",

language = "English (US)",

volume = "2015-December",

booktitle = "2015 15th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "15th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2015 ; Conference date: 14-09-2015 Through 18-09-2015",

}

TY - GEN

T1 - TID impact on process modified CBRAM cells

AU - Gonzalez Velo, Yago

AU - Mahmud, A.

AU - Chen, W.

AU - Taggart, J.

AU - Barnaby, Hugh

AU - Kozicki, Michael

AU - Ailavajhala, M.

AU - Holbert, Keith

AU - Mitkova, M.

PY - 2015/12/24

Y1 - 2015/12/24

N2 - In this study it is shown that Conductive Bridging Random Access Memory (CBRAM) might be sensitive to Total Ionizing Dose (TID) depending on the manufacturing process. TID levels at which sensitivity occurs for one of the studied processes are still very high, showing that CBRAM technology is a very interesting solution for future Non Volatile Memory (NVM) technologies to be used in space.

AB - In this study it is shown that Conductive Bridging Random Access Memory (CBRAM) might be sensitive to Total Ionizing Dose (TID) depending on the manufacturing process. TID levels at which sensitivity occurs for one of the studied processes are still very high, showing that CBRAM technology is a very interesting solution for future Non Volatile Memory (NVM) technologies to be used in space.

KW - Cation

KW - CBRAM radiation effects

KW - Chalcogenide glass

KW - ECM

KW - Electrochemical metallization

KW - Memristors

KW - Nanoionic memory

KW - PMC

KW - Programmable metallization cell

KW - ReRAM

KW - Resistive switching

KW - Total ionizing dose

UR - http://www.scopus.com/inward/record.url?scp=84973301105&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84973301105&partnerID=8YFLogxK

U2 - 10.1109/RADECS.2015.7365685

DO - 10.1109/RADECS.2015.7365685

M3 - Conference contribution

AN - SCOPUS:84973301105

VL - 2015-December

BT - 2015 15th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 15th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2015

Y2 - 14 September 2015 through 18 September 2015

ER -