Abstract

In this study it is shown that Conductive Bridging Random Access Memory (CBRAM) might be sensitive to Total Ionizing Dose (TID) depending on the manufacturing process. TID levels at which sensitivity occurs for one of the studied processes are still very high, showing that CBRAM technology is a very interesting solution for future Non Volatile Memory (NVM) technologies to be used in space.

Original languageEnglish (US)
Title of host publication2015 15th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Volume2015-December
ISBN (Electronic)9781509002313
DOIs
StatePublished - Dec 24 2015
Event15th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2015 - Moscow, Russian Federation
Duration: Sep 14 2015Sep 18 2015

Other

Other15th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2015
CountryRussian Federation
CityMoscow
Period9/14/159/18/15

Keywords

  • Cation
  • Cation
  • CBRAM radiation effects
  • Chalcogenide glass
  • ECM
  • Electrochemical metallization
  • Memristors
  • Nanoionic memory
  • PMC
  • Programmable metallization cell
  • ReRAM
  • Resistive switching
  • Total ionizing dose

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation

Fingerprint Dive into the research topics of 'TID impact on process modified CBRAM cells'. Together they form a unique fingerprint.

Cite this