Threshold voltage stabilization in radiation environments

D. V. Kerns, H. J. Barnaby, S. E. Kerns

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

CMOS circuit hardness to total ionizing dose is improved by a circuit technique that dynamically adjusts well and/or substrate voltages to maintain constant device threshold voltages. Threshold voltage excursions below a reference value activate an oscillator driving a charge pump. Stabilization is demonstrated experimentally. Techniques for optimizing the circuitry for various CMOS technology implementations are provided and supported with simulations.

Original languageEnglish (US)
Pages (from-to)3175-3178
Number of pages4
JournalIEEE Transactions on Nuclear Science
Volume45
Issue number6 PART 3
DOIs
StatePublished - Dec 1 1998
Externally publishedYes

Keywords

  • Back-gate
  • Body, feedback
  • Silicon MOSFET
  • Threshold voltage
  • Threshold voltage control
  • Total ionizing dose (TID)

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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