Threshold voltage stabilization in radiation environments

D. V. Kerns; H. J. Barnaby; S. E. Kerns

doi:10.1109/23.736196

Threshold voltage stabilization in radiation environments

D. V. Kerns, H. J. Barnaby, S. E. Kerns

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

CMOS circuit hardness to total ionizing dose is improved by a circuit technique that dynamically adjusts well and/or substrate voltages to maintain constant device threshold voltages. Threshold voltage excursions below a reference value activate an oscillator driving a charge pump. Stabilization is demonstrated experimentally. Techniques for optimizing the circuitry for various CMOS technology implementations are provided and supported with simulations.

Original language	English (US)
Pages (from-to)	3175-3178
Number of pages	4
Journal	IEEE Transactions on Nuclear Science
Volume	45
Issue number	6 PART 3
DOIs	https://doi.org/10.1109/23.736196
State	Published - 1998
Externally published	Yes

Keywords

Back-gate
Body, feedback
Silicon MOSFET
Threshold voltage
Threshold voltage control
Total ionizing dose (TID)

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/23.736196

Cite this

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title = "Threshold voltage stabilization in radiation environments",

abstract = "CMOS circuit hardness to total ionizing dose is improved by a circuit technique that dynamically adjusts well and/or substrate voltages to maintain constant device threshold voltages. Threshold voltage excursions below a reference value activate an oscillator driving a charge pump. Stabilization is demonstrated experimentally. Techniques for optimizing the circuitry for various CMOS technology implementations are provided and supported with simulations.",

keywords = "Back-gate, Body, feedback, Silicon MOSFET, Threshold voltage, Threshold voltage control, Total ionizing dose (TID)",

author = "Kerns, {D. V.} and Barnaby, {H. J.} and Kerns, {S. E.}",

year = "1998",

doi = "10.1109/23.736196",

language = "English (US)",

volume = "45",

pages = "3175--3178",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Threshold voltage stabilization in radiation environments

AU - Kerns, D. V.

AU - Barnaby, H. J.

AU - Kerns, S. E.

PY - 1998

Y1 - 1998

N2 - CMOS circuit hardness to total ionizing dose is improved by a circuit technique that dynamically adjusts well and/or substrate voltages to maintain constant device threshold voltages. Threshold voltage excursions below a reference value activate an oscillator driving a charge pump. Stabilization is demonstrated experimentally. Techniques for optimizing the circuitry for various CMOS technology implementations are provided and supported with simulations.

AB - CMOS circuit hardness to total ionizing dose is improved by a circuit technique that dynamically adjusts well and/or substrate voltages to maintain constant device threshold voltages. Threshold voltage excursions below a reference value activate an oscillator driving a charge pump. Stabilization is demonstrated experimentally. Techniques for optimizing the circuitry for various CMOS technology implementations are provided and supported with simulations.

KW - Back-gate

KW - Body, feedback

KW - Silicon MOSFET

KW - Threshold voltage

KW - Threshold voltage control

KW - Total ionizing dose (TID)

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UR - http://www.scopus.com/inward/citedby.url?scp=0032319873&partnerID=8YFLogxK

U2 - 10.1109/23.736196

DO - 10.1109/23.736196

M3 - Article

AN - SCOPUS:0032319873

SN - 0018-9499

VL - 45

SP - 3175

EP - 3178

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6 PART 3

ER -

Threshold voltage stabilization in radiation environments

Abstract

Keywords

ASJC Scopus subject areas

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