Threshold voltage shifts in narrow-width SOI devices due to quantum mechanical size-quantization effects

Shaikh S. Ahmed, Dragica Vasileska

Research output: Contribution to journalArticle

Abstract

We have investigated the impact of quantum mechanical space-quantization effects on the operation of a narrow-width SOI device structure. The presence of a two-dimensional carrier confinement gives rise to larger average displacement of the carriers from the interface proper and lower sheet electron density in the channel region. This, in turn, results not only in a significant increase in the threshold voltage but also in its pronounced channel width dependency. In this work, we have used classical 3D Monte Carlo particle-based simulations. Quantum mechanical space-quantization effects have been accounted for via an effective potential scheme that has been quite successful in describing bandgap widening effect and charge set back from the interface.

Original languageEnglish (US)
Pages (from-to)48-52
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume19
Issue number1-2
DOIs
StatePublished - Jul 2003

Fingerprint

SOI (semiconductors)
Threshold voltage
threshold voltage
Carrier concentration
Energy gap
shift
simulation

Keywords

  • 3D Monte Carlo simulation
  • Effective potential
  • Quantum mechanical space-quantization
  • SOI devices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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abstract = "We have investigated the impact of quantum mechanical space-quantization effects on the operation of a narrow-width SOI device structure. The presence of a two-dimensional carrier confinement gives rise to larger average displacement of the carriers from the interface proper and lower sheet electron density in the channel region. This, in turn, results not only in a significant increase in the threshold voltage but also in its pronounced channel width dependency. In this work, we have used classical 3D Monte Carlo particle-based simulations. Quantum mechanical space-quantization effects have been accounted for via an effective potential scheme that has been quite successful in describing bandgap widening effect and charge set back from the interface.",
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AB - We have investigated the impact of quantum mechanical space-quantization effects on the operation of a narrow-width SOI device structure. The presence of a two-dimensional carrier confinement gives rise to larger average displacement of the carriers from the interface proper and lower sheet electron density in the channel region. This, in turn, results not only in a significant increase in the threshold voltage but also in its pronounced channel width dependency. In this work, we have used classical 3D Monte Carlo particle-based simulations. Quantum mechanical space-quantization effects have been accounted for via an effective potential scheme that has been quite successful in describing bandgap widening effect and charge set back from the interface.

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