TY - JOUR
T1 - Threshold voltage shifts in narrow-width SOI devices due to quantum mechanical size-quantization effects
AU - Ahmed, Shaikh S.
AU - Vasileska, Dragica
N1 - Funding Information:
The authors would like to thank Prof. Stephen M. Goodnick, and D.K. Ferry for valuable discussions during the preparation of this manuscript. The financial support from the Office of Naval Research under Contract No. N000149910318 and the National Science Foundation under Contract Nos. NSF-ECS-9976484 and NSF-ECS-0214867 are also acknowledged.
PY - 2003/7
Y1 - 2003/7
N2 - We have investigated the impact of quantum mechanical space-quantization effects on the operation of a narrow-width SOI device structure. The presence of a two-dimensional carrier confinement gives rise to larger average displacement of the carriers from the interface proper and lower sheet electron density in the channel region. This, in turn, results not only in a significant increase in the threshold voltage but also in its pronounced channel width dependency. In this work, we have used classical 3D Monte Carlo particle-based simulations. Quantum mechanical space-quantization effects have been accounted for via an effective potential scheme that has been quite successful in describing bandgap widening effect and charge set back from the interface.
AB - We have investigated the impact of quantum mechanical space-quantization effects on the operation of a narrow-width SOI device structure. The presence of a two-dimensional carrier confinement gives rise to larger average displacement of the carriers from the interface proper and lower sheet electron density in the channel region. This, in turn, results not only in a significant increase in the threshold voltage but also in its pronounced channel width dependency. In this work, we have used classical 3D Monte Carlo particle-based simulations. Quantum mechanical space-quantization effects have been accounted for via an effective potential scheme that has been quite successful in describing bandgap widening effect and charge set back from the interface.
KW - 3D Monte Carlo simulation
KW - Effective potential
KW - Quantum mechanical space-quantization
KW - SOI devices
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U2 - 10.1016/S1386-9477(03)00328-X
DO - 10.1016/S1386-9477(03)00328-X
M3 - Conference article
AN - SCOPUS:0042009662
SN - 1386-9477
VL - 19
SP - 48
EP - 52
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
IS - 1-2
T2 - Fourth International Symposium on Nanostructures and Mesoscopi
Y2 - 17 February 2003 through 21 February 2003
ER -