Abstract
Electrical stress degradation of low temperature, amorphous silicon thin film transistors is reviewed, and the implications for various types of flexible circuitry including active matrix backplanes, integrated drivers and general purpose digital circuitry are examined. A circuit modeling tool that enables the prediction of complex circuit degradation is presented.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of International Meeting on Information Display |
| Pages | 1297-1300 |
| Number of pages | 4 |
| Volume | 8 |
| State | Published - 2008 |
| Event | 8th International Meeting on Information Display - International Display Manufacturing Conference 2008 and Asia Display 2008, IMID/IDMC/ASIA DISPLAY 2008 - Ilsan, Korea, Republic of Duration: Oct 13 2008 → Oct 17 2008 |
Other
| Other | 8th International Meeting on Information Display - International Display Manufacturing Conference 2008 and Asia Display 2008, IMID/IDMC/ASIA DISPLAY 2008 |
|---|---|
| Country | Korea, Republic of |
| City | Ilsan |
| Period | 10/13/08 → 10/17/08 |
Keywords
- Amorphous silicon
- Flexible display
- TFT
ASJC Scopus subject areas
- Engineering(all)
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Allee, D., Venugopal, S. M., Shringarpure, R., Kaftanoglu, K., Uppili, S. G., Clark, L. T., Vogt, B., & Bawolek, E. J. (2008). Threshold voltage instability in a-Si: H TFTs and the implications for flexible displays and circuits. In Proceedings of International Meeting on Information Display (Vol. 8, pp. 1297-1300)