Threshold voltage instability in a-Si: H TFTs and the implications for flexible displays and circuits

David Allee, S. M. Venugopal, R. Shringarpure, K. Kaftanoglu, S. G. Uppili, L. T. Clark, B. Vogt, E. J. Bawolek

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electrical stress degradation of low temperature, amorphous silicon thin film transistors is reviewed, and the implications for various types of flexible circuitry including active matrix backplanes, integrated drivers and general purpose digital circuitry are examined. A circuit modeling tool that enables the prediction of complex circuit degradation is presented.

Original languageEnglish (US)
Title of host publicationProceedings of International Meeting on Information Display
Pages1297-1300
Number of pages4
Volume8
StatePublished - 2008
Event8th International Meeting on Information Display - International Display Manufacturing Conference 2008 and Asia Display 2008, IMID/IDMC/ASIA DISPLAY 2008 - Ilsan, Korea, Republic of
Duration: Oct 13 2008Oct 17 2008

Other

Other8th International Meeting on Information Display - International Display Manufacturing Conference 2008 and Asia Display 2008, IMID/IDMC/ASIA DISPLAY 2008
CountryKorea, Republic of
CityIlsan
Period10/13/0810/17/08

Keywords

  • Amorphous silicon
  • Flexible display
  • TFT

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Allee, D., Venugopal, S. M., Shringarpure, R., Kaftanoglu, K., Uppili, S. G., Clark, L. T., Vogt, B., & Bawolek, E. J. (2008). Threshold voltage instability in a-Si: H TFTs and the implications for flexible displays and circuits. In Proceedings of International Meeting on Information Display (Vol. 8, pp. 1297-1300)