Threshold voltage instability in a-Si: H TFTs and the implications for flexible displays and circuits

David Allee; S. M. Venugopal; R. Shringarpure; K. Kaftanoglu; S. G. Uppili; L. T. Clark; B. Vogt; E. J. Bawolek

Threshold voltage instability in a-Si: H TFTs and the implications for flexible displays and circuits

David Allee, S. M. Venugopal, R. Shringarpure, K. Kaftanoglu, S. G. Uppili, L. T. Clark, B. Vogt, E. J. Bawolek

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Electrical stress degradation of low temperature, amorphous silicon thin film transistors is reviewed, and the implications for various types of flexible circuitry including active matrix backplanes, integrated drivers and general purpose digital circuitry are examined. A circuit modeling tool that enables the prediction of complex circuit degradation is presented.

Original language	English (US)
Title of host publication	Proceedings of International Meeting on Information Display
Pages	1297-1300
Number of pages	4
Volume	8
State	Published - 2008
Event	8th International Meeting on Information Display - International Display Manufacturing Conference 2008 and Asia Display 2008, IMID/IDMC/ASIA DISPLAY 2008 - Ilsan, Korea, Republic of Duration: Oct 13 2008 → Oct 17 2008

Other

Other	8th International Meeting on Information Display - International Display Manufacturing Conference 2008 and Asia Display 2008, IMID/IDMC/ASIA DISPLAY 2008
Country/Territory	Korea, Republic of
City	Ilsan
Period	10/13/08 → 10/17/08

Keywords

Amorphous silicon
Flexible display
TFT

ASJC Scopus subject areas

Engineering(all)

Cite this

Allee, D, Venugopal, SM, Shringarpure, R, Kaftanoglu, K, Uppili, SG, Clark, LT, Vogt, B & Bawolek, EJ 2008, Threshold voltage instability in a-Si: H TFTs and the implications for flexible displays and circuits. in Proceedings of International Meeting on Information Display. vol. 8, pp. 1297-1300, 8th International Meeting on Information Display - International Display Manufacturing Conference 2008 and Asia Display 2008, IMID/IDMC/ASIA DISPLAY 2008, Ilsan, Korea, Republic of, 10/13/08.

@inproceedings{81577e76027d4ff49fcc1a5fb338a9ca,

title = "Threshold voltage instability in a-Si: H TFTs and the implications for flexible displays and circuits",

abstract = "Electrical stress degradation of low temperature, amorphous silicon thin film transistors is reviewed, and the implications for various types of flexible circuitry including active matrix backplanes, integrated drivers and general purpose digital circuitry are examined. A circuit modeling tool that enables the prediction of complex circuit degradation is presented.",

keywords = "Amorphous silicon, Flexible display, TFT",

author = "David Allee and Venugopal, {S. M.} and R. Shringarpure and K. Kaftanoglu and Uppili, {S. G.} and Clark, {L. T.} and B. Vogt and Bawolek, {E. J.}",

year = "2008",

language = "English (US)",

volume = "8",

pages = "1297--1300",

booktitle = "Proceedings of International Meeting on Information Display",

note = "8th International Meeting on Information Display - International Display Manufacturing Conference 2008 and Asia Display 2008, IMID/IDMC/ASIA DISPLAY 2008 ; Conference date: 13-10-2008 Through 17-10-2008",

}

TY - GEN

T1 - Threshold voltage instability in a-Si

T2 - 8th International Meeting on Information Display - International Display Manufacturing Conference 2008 and Asia Display 2008, IMID/IDMC/ASIA DISPLAY 2008

AU - Allee, David

AU - Venugopal, S. M.

AU - Shringarpure, R.

AU - Kaftanoglu, K.

AU - Uppili, S. G.

AU - Clark, L. T.

AU - Vogt, B.

AU - Bawolek, E. J.

PY - 2008

Y1 - 2008

N2 - Electrical stress degradation of low temperature, amorphous silicon thin film transistors is reviewed, and the implications for various types of flexible circuitry including active matrix backplanes, integrated drivers and general purpose digital circuitry are examined. A circuit modeling tool that enables the prediction of complex circuit degradation is presented.

AB - Electrical stress degradation of low temperature, amorphous silicon thin film transistors is reviewed, and the implications for various types of flexible circuitry including active matrix backplanes, integrated drivers and general purpose digital circuitry are examined. A circuit modeling tool that enables the prediction of complex circuit degradation is presented.

KW - Amorphous silicon

KW - Flexible display

KW - TFT

UR - http://www.scopus.com/inward/record.url?scp=65649136194&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=65649136194&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:65649136194

VL - 8

SP - 1297

EP - 1300

BT - Proceedings of International Meeting on Information Display

Y2 - 13 October 2008 through 17 October 2008

ER -

Threshold voltage instability in a-Si: H TFTs and the implications for flexible displays and circuits

Abstract

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Keywords

ASJC Scopus subject areas

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