Threshold switching and memory behaviors of epitaxially regrown gan-on-gan vertical p-n Diodes with High Temperature Stability

Kai Fu, Houqiang Fu, Xuanqi Huang, Tsung Han Yang, Hong Chen, Izak Baranowski, Jossue Montes, Chen Yang, Jingan Zhou, Yuji Zhao

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

This letter reports the observation of threshold switching and memory behaviors of epitaxially regrown GaN-on-GaN vertical p-n diodes. This mechanism was ascribed to the conductive path formed by traps in the insulating layer at the regrowth interface after soft breakdown. The device can reliably switch more than 1000 cycles at both room temperature and 300°C with small fluctuation on the set and reset voltage. The set voltage increased with the increasing temperature due to the enhanced thermal detrapping effect that made it harder to form conductive path at high temperatures. Besides, the device showed memory behaviors when the reset voltage was higher than 4.4 V. This letter can serve as an important reference to further developing GaN-based memory devices and integrated circuits.

Original languageEnglish (US)
Article number8605350
Pages (from-to)375-378
Number of pages4
JournalIEEE Electron Device Letters
Volume40
Issue number3
DOIs
StatePublished - Mar 2019

Keywords

  • Gallium nitride
  • breakdown
  • memory
  • p-n diodes
  • threshold switching
  • wide bandgap semiconductor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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