Three-step deposition method for improvement of the dielectric properties of BST thin films

H. Liu, V. Avrutin, C. Zhu, J. H. Leach, E. Rowe, L. Zhou, David Smith, Ü Özgür, H. Morkoç

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Epitaixal Ba0.5Sr0.5TiO3 (BST) thin films were grown on SrTiO3 (STO) and DyScO3 substrates by radio-frequency magnetron sputtering system using three-step method which involves a relatively low-temperature (573-773 K) growth of a BST interlayer sandwiched between two BST layers deposited at a high substrate temperature of 1068 K. X-ray diffraction measurement showed different strains on the films with interlayers grown at different temperatures. Post-growth thermal treatment reduced film strain to a great extent (the film strain of a tri-layer film with a 773 K grown interlayer is only -0.001). Comparing with the control films grown at high temperature, three-step technique improved the dielectric properties, especially increased dielectric constant by 60% for BST/STO and 31% for BST/DyScO3, respectively. High dielectric constant of 1631.4 and its tuning of 36.7% were achieved on the BST/STO with an interlayer grown on 773 K.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages38-43
Number of pages6
Volume1397
DOIs
StatePublished - 2011
Event2011 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 28 2011Dec 2 2011

Other

Other2011 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/28/1112/2/11

Fingerprint

Dielectric properties
dielectric properties
interlayers
Thin films
thin films
Permittivity
permittivity
Temperature
Substrates
Magnetron sputtering
radio frequencies
magnetron sputtering
Tuning
Heat treatment
tuning
X ray diffraction
temperature
diffraction
strontium titanium oxide
x rays

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Liu, H., Avrutin, V., Zhu, C., Leach, J. H., Rowe, E., Zhou, L., ... Morkoç, H. (2011). Three-step deposition method for improvement of the dielectric properties of BST thin films. In Materials Research Society Symposium Proceedings (Vol. 1397, pp. 38-43) https://doi.org/10.1557/opl.2012.451

Three-step deposition method for improvement of the dielectric properties of BST thin films. / Liu, H.; Avrutin, V.; Zhu, C.; Leach, J. H.; Rowe, E.; Zhou, L.; Smith, David; Özgür, Ü; Morkoç, H.

Materials Research Society Symposium Proceedings. Vol. 1397 2011. p. 38-43.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Liu, H, Avrutin, V, Zhu, C, Leach, JH, Rowe, E, Zhou, L, Smith, D, Özgür, Ü & Morkoç, H 2011, Three-step deposition method for improvement of the dielectric properties of BST thin films. in Materials Research Society Symposium Proceedings. vol. 1397, pp. 38-43, 2011 MRS Fall Meeting, Boston, MA, United States, 11/28/11. https://doi.org/10.1557/opl.2012.451
Liu H, Avrutin V, Zhu C, Leach JH, Rowe E, Zhou L et al. Three-step deposition method for improvement of the dielectric properties of BST thin films. In Materials Research Society Symposium Proceedings. Vol. 1397. 2011. p. 38-43 https://doi.org/10.1557/opl.2012.451
Liu, H. ; Avrutin, V. ; Zhu, C. ; Leach, J. H. ; Rowe, E. ; Zhou, L. ; Smith, David ; Özgür, Ü ; Morkoç, H. / Three-step deposition method for improvement of the dielectric properties of BST thin films. Materials Research Society Symposium Proceedings. Vol. 1397 2011. pp. 38-43
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