TY - GEN
T1 - Three-step deposition method for improvement of the dielectric properties of BST thin films
AU - Liu, H.
AU - Avrutin, V.
AU - Zhu, C.
AU - Leach, J. H.
AU - Rowe, E.
AU - Zhou, L.
AU - Smith, David
AU - Özgür, Ü
AU - Morkoç, H.
N1 - Funding Information:
This work was supported by ONR through under direction of Dr. Hadis Morkoc.
Copyright:
Copyright 2013 Elsevier B.V., All rights reserved.
PY - 2011
Y1 - 2011
N2 - Epitaixal Ba0.5Sr0.5TiO3 (BST) thin films were grown on SrTiO3 (STO) and DyScO3 substrates by radio-frequency magnetron sputtering system using three-step method which involves a relatively low-temperature (573-773 K) growth of a BST interlayer sandwiched between two BST layers deposited at a high substrate temperature of 1068 K. X-ray diffraction measurement showed different strains on the films with interlayers grown at different temperatures. Post-growth thermal treatment reduced film strain to a great extent (the film strain of a tri-layer film with a 773 K grown interlayer is only -0.001). Comparing with the control films grown at high temperature, three-step technique improved the dielectric properties, especially increased dielectric constant by 60% for BST/STO and 31% for BST/DyScO3, respectively. High dielectric constant of 1631.4 and its tuning of 36.7% were achieved on the BST/STO with an interlayer grown on 773 K.
AB - Epitaixal Ba0.5Sr0.5TiO3 (BST) thin films were grown on SrTiO3 (STO) and DyScO3 substrates by radio-frequency magnetron sputtering system using three-step method which involves a relatively low-temperature (573-773 K) growth of a BST interlayer sandwiched between two BST layers deposited at a high substrate temperature of 1068 K. X-ray diffraction measurement showed different strains on the films with interlayers grown at different temperatures. Post-growth thermal treatment reduced film strain to a great extent (the film strain of a tri-layer film with a 773 K grown interlayer is only -0.001). Comparing with the control films grown at high temperature, three-step technique improved the dielectric properties, especially increased dielectric constant by 60% for BST/STO and 31% for BST/DyScO3, respectively. High dielectric constant of 1631.4 and its tuning of 36.7% were achieved on the BST/STO with an interlayer grown on 773 K.
UR - http://www.scopus.com/inward/record.url?scp=84879201605&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84879201605&partnerID=8YFLogxK
U2 - 10.1557/opl.2012.451
DO - 10.1557/opl.2012.451
M3 - Conference contribution
AN - SCOPUS:84879201605
SN - 9781627482158
T3 - Materials Research Society Symposium Proceedings
SP - 38
EP - 43
BT - Ferroelectric and Multiferroic Materials
T2 - 2011 MRS Fall Meeting
Y2 - 28 November 2011 through 2 December 2011
ER -