Three-step deposition method for improvement of the dielectric properties of BST thin films

H. Liu, V. Avrutin, C. Zhu, J. H. Leach, E. Rowe, L. Zhou, David Smith, Ü Özgür, H. Morkoç

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Epitaixal Ba0.5Sr0.5TiO3 (BST) thin films were grown on SrTiO3 (STO) and DyScO3 substrates by radio-frequency magnetron sputtering system using three-step method which involves a relatively low-temperature (573-773 K) growth of a BST interlayer sandwiched between two BST layers deposited at a high substrate temperature of 1068 K. X-ray diffraction measurement showed different strains on the films with interlayers grown at different temperatures. Post-growth thermal treatment reduced film strain to a great extent (the film strain of a tri-layer film with a 773 K grown interlayer is only -0.001). Comparing with the control films grown at high temperature, three-step technique improved the dielectric properties, especially increased dielectric constant by 60% for BST/STO and 31% for BST/DyScO3, respectively. High dielectric constant of 1631.4 and its tuning of 36.7% were achieved on the BST/STO with an interlayer grown on 773 K.

Original languageEnglish (US)
Title of host publicationFerroelectric and Multiferroic Materials
Pages38-43
Number of pages6
DOIs
StatePublished - Dec 1 2011
Event2011 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 28 2011Dec 2 2011

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1397
ISSN (Print)0272-9172

Other

Other2011 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/28/1112/2/11

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Three-step deposition method for improvement of the dielectric properties of BST thin films'. Together they form a unique fingerprint.

Cite this