Three-dimensional topography simulation for deposition and etching processes using a level set method

A. Sheikholeslami; C. Heitzinger; T. Grasser; S. Selberherr

Three-dimensional topography simulation for deposition and etching processes using a level set method

A. Sheikholeslami, C. Heitzinger, T. Grasser, S. Selberherr

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We present the application of level set and fast marching methods to the simulation of surface topography of a wafer in three dimensions for deposition and etching processes. These simulations rest on many techniques, including a narrow band level set method, fast marching for the Eikonal equation, extension of the speed function, transport models, visibility determination, and an iterative equation solver.

Original language	English (US)
Title of host publication	Proceedings of the International Conference on Microelectronics
Pages	241-244
Number of pages	4
Volume	24 I
State	Published - 2004
Externally published	Yes
Event	Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004 - Nis Duration: May 16 2004 → May 19 2004

Other

Other	Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004
City	Nis
Period	5/16/04 → 5/19/04

ASJC Scopus subject areas

General Engineering

Cite this

@inproceedings{ce0fd2ebf3db4c0d9f95472fb838dc0d,

title = "Three-dimensional topography simulation for deposition and etching processes using a level set method",

abstract = "We present the application of level set and fast marching methods to the simulation of surface topography of a wafer in three dimensions for deposition and etching processes. These simulations rest on many techniques, including a narrow band level set method, fast marching for the Eikonal equation, extension of the speed function, transport models, visibility determination, and an iterative equation solver.",

author = "A. Sheikholeslami and C. Heitzinger and T. Grasser and S. Selberherr",

year = "2004",

language = "English (US)",

volume = "24 I",

pages = "241--244",

booktitle = "Proceedings of the International Conference on Microelectronics",

note = "Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004 ; Conference date: 16-05-2004 Through 19-05-2004",

}

TY - GEN

T1 - Three-dimensional topography simulation for deposition and etching processes using a level set method

AU - Sheikholeslami, A.

AU - Heitzinger, C.

AU - Grasser, T.

AU - Selberherr, S.

PY - 2004

Y1 - 2004

N2 - We present the application of level set and fast marching methods to the simulation of surface topography of a wafer in three dimensions for deposition and etching processes. These simulations rest on many techniques, including a narrow band level set method, fast marching for the Eikonal equation, extension of the speed function, transport models, visibility determination, and an iterative equation solver.

AB - We present the application of level set and fast marching methods to the simulation of surface topography of a wafer in three dimensions for deposition and etching processes. These simulations rest on many techniques, including a narrow band level set method, fast marching for the Eikonal equation, extension of the speed function, transport models, visibility determination, and an iterative equation solver.

UR - http://www.scopus.com/inward/record.url?scp=3142760038&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3142760038&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:3142760038

VL - 24 I

SP - 241

EP - 244

BT - Proceedings of the International Conference on Microelectronics

T2 - Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004

Y2 - 16 May 2004 through 19 May 2004

ER -

Three-dimensional topography simulation for deposition and etching processes using a level set method

Abstract

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ASJC Scopus subject areas

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