Three-dimensional topography simulation for deposition and etching processes using a level set method

A. Sheikholeslami, C. Heitzinger, T. Grasser, S. Selberherr

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We present the application of level set and fast marching methods to the simulation of surface topography of a wafer in three dimensions for deposition and etching processes. These simulations rest on many techniques, including a narrow band level set method, fast marching for the Eikonal equation, extension of the speed function, transport models, visibility determination, and an iterative equation solver.

Original languageEnglish (US)
Title of host publicationProceedings of the International Conference on Microelectronics
Pages241-244
Number of pages4
Volume24 I
StatePublished - 2004
Externally publishedYes
EventProceedings - 2004 24th International Conference on Microelectronics, MIEL 2004 - Nis
Duration: May 16 2004May 19 2004

Other

OtherProceedings - 2004 24th International Conference on Microelectronics, MIEL 2004
CityNis
Period5/16/045/19/04

Fingerprint

Surface topography
Visibility
Topography
Etching

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Sheikholeslami, A., Heitzinger, C., Grasser, T., & Selberherr, S. (2004). Three-dimensional topography simulation for deposition and etching processes using a level set method. In Proceedings of the International Conference on Microelectronics (Vol. 24 I, pp. 241-244)

Three-dimensional topography simulation for deposition and etching processes using a level set method. / Sheikholeslami, A.; Heitzinger, C.; Grasser, T.; Selberherr, S.

Proceedings of the International Conference on Microelectronics. Vol. 24 I 2004. p. 241-244.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sheikholeslami, A, Heitzinger, C, Grasser, T & Selberherr, S 2004, Three-dimensional topography simulation for deposition and etching processes using a level set method. in Proceedings of the International Conference on Microelectronics. vol. 24 I, pp. 241-244, Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004, Nis, 5/16/04.
Sheikholeslami A, Heitzinger C, Grasser T, Selberherr S. Three-dimensional topography simulation for deposition and etching processes using a level set method. In Proceedings of the International Conference on Microelectronics. Vol. 24 I. 2004. p. 241-244
Sheikholeslami, A. ; Heitzinger, C. ; Grasser, T. ; Selberherr, S. / Three-dimensional topography simulation for deposition and etching processes using a level set method. Proceedings of the International Conference on Microelectronics. Vol. 24 I 2004. pp. 241-244
@inproceedings{ce0fd2ebf3db4c0d9f95472fb838dc0d,
title = "Three-dimensional topography simulation for deposition and etching processes using a level set method",
abstract = "We present the application of level set and fast marching methods to the simulation of surface topography of a wafer in three dimensions for deposition and etching processes. These simulations rest on many techniques, including a narrow band level set method, fast marching for the Eikonal equation, extension of the speed function, transport models, visibility determination, and an iterative equation solver.",
author = "A. Sheikholeslami and C. Heitzinger and T. Grasser and S. Selberherr",
year = "2004",
language = "English (US)",
volume = "24 I",
pages = "241--244",
booktitle = "Proceedings of the International Conference on Microelectronics",

}

TY - GEN

T1 - Three-dimensional topography simulation for deposition and etching processes using a level set method

AU - Sheikholeslami, A.

AU - Heitzinger, C.

AU - Grasser, T.

AU - Selberherr, S.

PY - 2004

Y1 - 2004

N2 - We present the application of level set and fast marching methods to the simulation of surface topography of a wafer in three dimensions for deposition and etching processes. These simulations rest on many techniques, including a narrow band level set method, fast marching for the Eikonal equation, extension of the speed function, transport models, visibility determination, and an iterative equation solver.

AB - We present the application of level set and fast marching methods to the simulation of surface topography of a wafer in three dimensions for deposition and etching processes. These simulations rest on many techniques, including a narrow band level set method, fast marching for the Eikonal equation, extension of the speed function, transport models, visibility determination, and an iterative equation solver.

UR - http://www.scopus.com/inward/record.url?scp=3142760038&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3142760038&partnerID=8YFLogxK

M3 - Conference contribution

VL - 24 I

SP - 241

EP - 244

BT - Proceedings of the International Conference on Microelectronics

ER -