Thin silicon solar cells using epitaxial lateral overgrowth structure

Ruiying Hao; C. Paola Murcia; Tim Creazzo; Tom Biegala; Anthony Lochtefeld; Ji Soo Park; Christiana Honsberg; Allen Barnett

doi:10.1109/PVSC.2009.5411132

Thin silicon solar cells using epitaxial lateral overgrowth structure

Ruiying Hao, C. Paola Murcia, Tim Creazzo, Tom Biegala, Anthony Lochtefeld, Ji Soo Park, Christiana Honsberg, Allen Barnett

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

Thin Si solar cell with epitaxial lateral overgrowth (ELO) structure described in this paper should demonstrate higher voltage. PC-1D program has been used to study the open circuit voltage and efficiency as a function of the thin Si thickness and light trapping. According to the simulation results, high voltage can be obtained even without light trapping on the backside of the thin Si layer. Thin n type silicon layer has been grown on p+ Si substrate using the method of epitaxial lateral overgrowth by CVD. The scanning electron microscopy (SEM) has been used to show the dimension of the pn junction region and light generation region after the n type Si growth.

Original language	English (US)
Title of host publication	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages	949-953
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2009.5411132
State	Published - 2009
Event	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States Duration: Jun 7 2009 → Jun 12 2009

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/Territory	United States
City	Philadelphia, PA
Period	6/7/09 → 6/12/09

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.1109/PVSC.2009.5411132

Cite this

Hao, R., Murcia, C. P., Creazzo, T., Biegala, T., Lochtefeld, A., Park, J. S., Honsberg, C., & Barnett, A. (2009). Thin silicon solar cells using epitaxial lateral overgrowth structure. In 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 (pp. 949-953). Article 5411132 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2009.5411132

Thin silicon solar cells using epitaxial lateral overgrowth structure. / Hao, Ruiying; Murcia, C. Paola; Creazzo, Tim et al.
2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. p. 949-953 5411132 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hao, R, Murcia, CP, Creazzo, T, Biegala, T, Lochtefeld, A, Park, JS, Honsberg, C & Barnett, A 2009, Thin silicon solar cells using epitaxial lateral overgrowth structure. in 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009., 5411132, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 949-953, 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States, 6/7/09. https://doi.org/10.1109/PVSC.2009.5411132

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abstract = "Thin Si solar cell with epitaxial lateral overgrowth (ELO) structure described in this paper should demonstrate higher voltage. PC-1D program has been used to study the open circuit voltage and efficiency as a function of the thin Si thickness and light trapping. According to the simulation results, high voltage can be obtained even without light trapping on the backside of the thin Si layer. Thin n type silicon layer has been grown on p+ Si substrate using the method of epitaxial lateral overgrowth by CVD. The scanning electron microscopy (SEM) has been used to show the dimension of the pn junction region and light generation region after the n type Si growth.",

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AU - Creazzo, Tim

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AU - Park, Ji Soo

AU - Honsberg, Christiana

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AB - Thin Si solar cell with epitaxial lateral overgrowth (ELO) structure described in this paper should demonstrate higher voltage. PC-1D program has been used to study the open circuit voltage and efficiency as a function of the thin Si thickness and light trapping. According to the simulation results, high voltage can be obtained even without light trapping on the backside of the thin Si layer. Thin n type silicon layer has been grown on p+ Si substrate using the method of epitaxial lateral overgrowth by CVD. The scanning electron microscopy (SEM) has been used to show the dimension of the pn junction region and light generation region after the n type Si growth.

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Thin silicon solar cells using epitaxial lateral overgrowth structure

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