Thin silicon solar cells using epitaxial lateral overgrowth structure

Ruiying Hao, C. Paola Murcia, Tim Creazzo, Tom Biegala, Anthony Lochtefeld, Ji Soo Park, Christiana Honsberg, Allen Barnett

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Thin Si solar cell with epitaxial lateral overgrowth (ELO) structure described in this paper should demonstrate higher voltage. PC-1D program has been used to study the open circuit voltage and efficiency as a function of the thin Si thickness and light trapping. According to the simulation results, high voltage can be obtained even without light trapping on the backside of the thin Si layer. Thin n type silicon layer has been grown on p+ Si substrate using the method of epitaxial lateral overgrowth by CVD. The scanning electron microscopy (SEM) has been used to show the dimension of the pn junction region and light generation region after the n type Si growth.

Original languageEnglish (US)
Title of host publication2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages949-953
Number of pages5
DOIs
StatePublished - Dec 1 2009
Event2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States
Duration: Jun 7 2009Jun 12 2009

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
CountryUnited States
CityPhiladelphia, PA
Period6/7/096/12/09

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Hao, R., Murcia, C. P., Creazzo, T., Biegala, T., Lochtefeld, A., Park, J. S., Honsberg, C., & Barnett, A. (2009). Thin silicon solar cells using epitaxial lateral overgrowth structure. In 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 (pp. 949-953). [5411132] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2009.5411132