'Thin silicon solar cells

A path to 35% shockley-queisser limits', a DOE funded FPACE II project

L. Ding, M. Boccard, J. Williams, A. Jeffries, S. Gangam, K. Ghosh, Christiana Honsberg, Stuart Bowden, Zachary Holman, H. Atwater, T. Buonassisi, S. Bremner, M. Green, C. Ballif, Mariana Bertoni

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Crystalline silicon technology is expected to remain the leading photovoltaic industry workhorse for decades. We present here the objectives and workplan of a recently launched project funded by the U.S. Department of Energy through the Foundational Program to Advance Cell Efficiency II (FPACE II), which aims at leading crystalline silicon to an efficiency breakthrough. The project will tackle fundamental approach of materials design, defect engineering, device simulations and materials growth and characterization. Among the main novelties, the implementation of carrier selective contacts made of wide bandgap material or stack of materials is investigated for improved passivation, carrier extraction and carrier transport. Based on an initial selection of candidate materials, preliminary experiments are conducted to verify the suitability of their critical parameters as well as preservation of the silicon substrate surface and bulk properties. The target materials include III-V and metal-oxide materials.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2467-2470
Number of pages4
ISBN (Print)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period6/8/146/13/14

Fingerprint

Silicon solar cells
Silicon
Crystalline materials
Carrier transport
Passivation
Oxides
Energy gap
Metals
Defects
Substrates
Industry
Experiments

Keywords

  • carrier selective contacts
  • crystalline silicon solar cells
  • passivation quality
  • photovoltaic cells
  • silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Ding, L., Boccard, M., Williams, J., Jeffries, A., Gangam, S., Ghosh, K., ... Bertoni, M. (2014). 'Thin silicon solar cells: A path to 35% shockley-queisser limits', a DOE funded FPACE II project. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 2467-2470). [6925429] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925429

'Thin silicon solar cells : A path to 35% shockley-queisser limits', a DOE funded FPACE II project. / Ding, L.; Boccard, M.; Williams, J.; Jeffries, A.; Gangam, S.; Ghosh, K.; Honsberg, Christiana; Bowden, Stuart; Holman, Zachary; Atwater, H.; Buonassisi, T.; Bremner, S.; Green, M.; Ballif, C.; Bertoni, Mariana.

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 2467-2470 6925429.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ding, L, Boccard, M, Williams, J, Jeffries, A, Gangam, S, Ghosh, K, Honsberg, C, Bowden, S, Holman, Z, Atwater, H, Buonassisi, T, Bremner, S, Green, M, Ballif, C & Bertoni, M 2014, 'Thin silicon solar cells: A path to 35% shockley-queisser limits', a DOE funded FPACE II project. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925429, Institute of Electrical and Electronics Engineers Inc., pp. 2467-2470, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 6/8/14. https://doi.org/10.1109/PVSC.2014.6925429
Ding L, Boccard M, Williams J, Jeffries A, Gangam S, Ghosh K et al. 'Thin silicon solar cells: A path to 35% shockley-queisser limits', a DOE funded FPACE II project. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 2467-2470. 6925429 https://doi.org/10.1109/PVSC.2014.6925429
Ding, L. ; Boccard, M. ; Williams, J. ; Jeffries, A. ; Gangam, S. ; Ghosh, K. ; Honsberg, Christiana ; Bowden, Stuart ; Holman, Zachary ; Atwater, H. ; Buonassisi, T. ; Bremner, S. ; Green, M. ; Ballif, C. ; Bertoni, Mariana. / 'Thin silicon solar cells : A path to 35% shockley-queisser limits', a DOE funded FPACE II project. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 2467-2470
@inproceedings{728549f8fb014a2f9bce7331ef5201a2,
title = "'Thin silicon solar cells: A path to 35{\%} shockley-queisser limits', a DOE funded FPACE II project",
abstract = "Crystalline silicon technology is expected to remain the leading photovoltaic industry workhorse for decades. We present here the objectives and workplan of a recently launched project funded by the U.S. Department of Energy through the Foundational Program to Advance Cell Efficiency II (FPACE II), which aims at leading crystalline silicon to an efficiency breakthrough. The project will tackle fundamental approach of materials design, defect engineering, device simulations and materials growth and characterization. Among the main novelties, the implementation of carrier selective contacts made of wide bandgap material or stack of materials is investigated for improved passivation, carrier extraction and carrier transport. Based on an initial selection of candidate materials, preliminary experiments are conducted to verify the suitability of their critical parameters as well as preservation of the silicon substrate surface and bulk properties. The target materials include III-V and metal-oxide materials.",
keywords = "carrier selective contacts, crystalline silicon solar cells, passivation quality, photovoltaic cells, silicon",
author = "L. Ding and M. Boccard and J. Williams and A. Jeffries and S. Gangam and K. Ghosh and Christiana Honsberg and Stuart Bowden and Zachary Holman and H. Atwater and T. Buonassisi and S. Bremner and M. Green and C. Ballif and Mariana Bertoni",
year = "2014",
month = "10",
day = "15",
doi = "10.1109/PVSC.2014.6925429",
language = "English (US)",
isbn = "9781479943982",
pages = "2467--2470",
booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - 'Thin silicon solar cells

T2 - A path to 35% shockley-queisser limits', a DOE funded FPACE II project

AU - Ding, L.

AU - Boccard, M.

AU - Williams, J.

AU - Jeffries, A.

AU - Gangam, S.

AU - Ghosh, K.

AU - Honsberg, Christiana

AU - Bowden, Stuart

AU - Holman, Zachary

AU - Atwater, H.

AU - Buonassisi, T.

AU - Bremner, S.

AU - Green, M.

AU - Ballif, C.

AU - Bertoni, Mariana

PY - 2014/10/15

Y1 - 2014/10/15

N2 - Crystalline silicon technology is expected to remain the leading photovoltaic industry workhorse for decades. We present here the objectives and workplan of a recently launched project funded by the U.S. Department of Energy through the Foundational Program to Advance Cell Efficiency II (FPACE II), which aims at leading crystalline silicon to an efficiency breakthrough. The project will tackle fundamental approach of materials design, defect engineering, device simulations and materials growth and characterization. Among the main novelties, the implementation of carrier selective contacts made of wide bandgap material or stack of materials is investigated for improved passivation, carrier extraction and carrier transport. Based on an initial selection of candidate materials, preliminary experiments are conducted to verify the suitability of their critical parameters as well as preservation of the silicon substrate surface and bulk properties. The target materials include III-V and metal-oxide materials.

AB - Crystalline silicon technology is expected to remain the leading photovoltaic industry workhorse for decades. We present here the objectives and workplan of a recently launched project funded by the U.S. Department of Energy through the Foundational Program to Advance Cell Efficiency II (FPACE II), which aims at leading crystalline silicon to an efficiency breakthrough. The project will tackle fundamental approach of materials design, defect engineering, device simulations and materials growth and characterization. Among the main novelties, the implementation of carrier selective contacts made of wide bandgap material or stack of materials is investigated for improved passivation, carrier extraction and carrier transport. Based on an initial selection of candidate materials, preliminary experiments are conducted to verify the suitability of their critical parameters as well as preservation of the silicon substrate surface and bulk properties. The target materials include III-V and metal-oxide materials.

KW - carrier selective contacts

KW - crystalline silicon solar cells

KW - passivation quality

KW - photovoltaic cells

KW - silicon

UR - http://www.scopus.com/inward/record.url?scp=84912096666&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84912096666&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2014.6925429

DO - 10.1109/PVSC.2014.6925429

M3 - Conference contribution

SN - 9781479943982

SP - 2467

EP - 2470

BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

ER -