Thin low-temperature gate oxides for vertical field-effect transistors

Michael Goryll, J. Moers, St Trellenkamp, L. Vescan, M. Marso, P. Kordoš, H. Lüth

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have investigated a novel technique for growing silicon dioxide gate dielectrics of 3-4 nm thickness using wet oxidation at a low temperature of 600°C. While this method is ideally suited to prevent dopant diffusion in small vertical MOSFETs the quality of the oxide layers is comparable with conventional gate oxide layers being grown by rapid thermal processing. Ellipsometric thickness measurements show a thickness variation of only 2% over a 3'' wafer. To determine the interface state density we used both the QS-HF-CV and the conductance measurement method. A comparison of these two measurement methods shows that the latter can be applied even in the presence of a high tunnelling cut-rent through the thin oxide layers. We were able to achieve a midgap interface state density of 3×1011 cm-2eV-1, being comparable with previously published results.

Original languageEnglish (US)
Title of host publicationASDAM 2002 - Conference Proceedings, 4th International Conference on Advanced Semiconductor Devices and Microsystems
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages275-277
Number of pages3
ISBN (Print)078037276X, 9780780372764
DOIs
StatePublished - 2002
Externally publishedYes
Event4th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2002 - Smolenice, Slovakia
Duration: Oct 14 2002Oct 16 2002

Other

Other4th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2002
CountrySlovakia
CitySmolenice
Period10/14/0210/16/02

Fingerprint

Field effect transistors
Interface states
Oxides
Rapid thermal processing
Thickness measurement
Gate dielectrics
Temperature
Silica
Doping (additives)
Oxidation

ASJC Scopus subject areas

  • Hardware and Architecture
  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Goryll, M., Moers, J., Trellenkamp, S., Vescan, L., Marso, M., Kordoš, P., & Lüth, H. (2002). Thin low-temperature gate oxides for vertical field-effect transistors. In ASDAM 2002 - Conference Proceedings, 4th International Conference on Advanced Semiconductor Devices and Microsystems (pp. 275-277). [1088523] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ASDAM.2002.1088523

Thin low-temperature gate oxides for vertical field-effect transistors. / Goryll, Michael; Moers, J.; Trellenkamp, St; Vescan, L.; Marso, M.; Kordoš, P.; Lüth, H.

ASDAM 2002 - Conference Proceedings, 4th International Conference on Advanced Semiconductor Devices and Microsystems. Institute of Electrical and Electronics Engineers Inc., 2002. p. 275-277 1088523.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Goryll, M, Moers, J, Trellenkamp, S, Vescan, L, Marso, M, Kordoš, P & Lüth, H 2002, Thin low-temperature gate oxides for vertical field-effect transistors. in ASDAM 2002 - Conference Proceedings, 4th International Conference on Advanced Semiconductor Devices and Microsystems., 1088523, Institute of Electrical and Electronics Engineers Inc., pp. 275-277, 4th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2002, Smolenice, Slovakia, 10/14/02. https://doi.org/10.1109/ASDAM.2002.1088523
Goryll M, Moers J, Trellenkamp S, Vescan L, Marso M, Kordoš P et al. Thin low-temperature gate oxides for vertical field-effect transistors. In ASDAM 2002 - Conference Proceedings, 4th International Conference on Advanced Semiconductor Devices and Microsystems. Institute of Electrical and Electronics Engineers Inc. 2002. p. 275-277. 1088523 https://doi.org/10.1109/ASDAM.2002.1088523
Goryll, Michael ; Moers, J. ; Trellenkamp, St ; Vescan, L. ; Marso, M. ; Kordoš, P. ; Lüth, H. / Thin low-temperature gate oxides for vertical field-effect transistors. ASDAM 2002 - Conference Proceedings, 4th International Conference on Advanced Semiconductor Devices and Microsystems. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 275-277
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