Thin films of CoSi 2 Co-deposited onto Si 1-xGe x alloys

Peter T. Goeller, Boyan I. Boyanov, Dale E. Sayers, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Cobalt disilicide films have been formed on strained epitaxial Si 0.80Ge 0.20/Si(100) alloys via co-deposition of silicon and cobalt. Co-deposition is shown to improve the epitaxy and prevent the phase segregation commonly observed with the formation of Co/SiGe contacts using other methods such as the direct deposition of cobalt onto SiGe or the sequential, deposition of a silicon sacrificial layer and cobalt onto SiGe. EXAFS measurements at the cobalt K edge indicate that co-deposited films annealed at 500-700 °C are indeed crystalline CoSi 2 throughout this temperature range. The XRD patterns of the co-deposited films do not exhibit any of the COSi 2 (111), (220) or (311) peaks normally associated with other preparation methods. The sheet resistance and r.m.s. roughness of the CoSi 2 films increase monotonically with annealing temperature. These results indicate that co-deposited films are epitaxial to the (100)-oriented SiGe substrate and suggest that low thermal budget, low resistivity contacts to strained SiGe can be grown with this method. Issues related to the presence of Ge at the CoSi 2substrate interface will be discussed.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages365-370
Number of pages6
Volume448
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 2 1996Dec 6 1996

Other

OtherProceedings of the 1996 MRS Fall Meeting
CityBoston, MA, USA
Period12/2/9612/6/96

Fingerprint

Cobalt
Thin films
Silicon
Epitaxial films
Sheet resistance
Epitaxial growth
Surface roughness
Annealing
Crystalline materials
Temperature
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Goeller, P. T., Boyanov, B. I., Sayers, D. E., & Nemanich, R. (1997). Thin films of CoSi 2 Co-deposited onto Si 1-xGe x alloys In Materials Research Society Symposium - Proceedings (Vol. 448, pp. 365-370). Materials Research Society.

Thin films of CoSi 2 Co-deposited onto Si 1-xGe x alloys . / Goeller, Peter T.; Boyanov, Boyan I.; Sayers, Dale E.; Nemanich, Robert.

Materials Research Society Symposium - Proceedings. Vol. 448 Materials Research Society, 1997. p. 365-370.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Goeller, PT, Boyanov, BI, Sayers, DE & Nemanich, R 1997, Thin films of CoSi 2 Co-deposited onto Si 1-xGe x alloys in Materials Research Society Symposium - Proceedings. vol. 448, Materials Research Society, pp. 365-370, Proceedings of the 1996 MRS Fall Meeting, Boston, MA, USA, 12/2/96.
Goeller PT, Boyanov BI, Sayers DE, Nemanich R. Thin films of CoSi 2 Co-deposited onto Si 1-xGe x alloys In Materials Research Society Symposium - Proceedings. Vol. 448. Materials Research Society. 1997. p. 365-370
Goeller, Peter T. ; Boyanov, Boyan I. ; Sayers, Dale E. ; Nemanich, Robert. / Thin films of CoSi 2 Co-deposited onto Si 1-xGe x alloys Materials Research Society Symposium - Proceedings. Vol. 448 Materials Research Society, 1997. pp. 365-370
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N2 - Cobalt disilicide films have been formed on strained epitaxial Si 0.80Ge 0.20/Si(100) alloys via co-deposition of silicon and cobalt. Co-deposition is shown to improve the epitaxy and prevent the phase segregation commonly observed with the formation of Co/SiGe contacts using other methods such as the direct deposition of cobalt onto SiGe or the sequential, deposition of a silicon sacrificial layer and cobalt onto SiGe. EXAFS measurements at the cobalt K edge indicate that co-deposited films annealed at 500-700 °C are indeed crystalline CoSi 2 throughout this temperature range. The XRD patterns of the co-deposited films do not exhibit any of the COSi 2 (111), (220) or (311) peaks normally associated with other preparation methods. The sheet resistance and r.m.s. roughness of the CoSi 2 films increase monotonically with annealing temperature. These results indicate that co-deposited films are epitaxial to the (100)-oriented SiGe substrate and suggest that low thermal budget, low resistivity contacts to strained SiGe can be grown with this method. Issues related to the presence of Ge at the CoSi 2substrate interface will be discussed.

AB - Cobalt disilicide films have been formed on strained epitaxial Si 0.80Ge 0.20/Si(100) alloys via co-deposition of silicon and cobalt. Co-deposition is shown to improve the epitaxy and prevent the phase segregation commonly observed with the formation of Co/SiGe contacts using other methods such as the direct deposition of cobalt onto SiGe or the sequential, deposition of a silicon sacrificial layer and cobalt onto SiGe. EXAFS measurements at the cobalt K edge indicate that co-deposited films annealed at 500-700 °C are indeed crystalline CoSi 2 throughout this temperature range. The XRD patterns of the co-deposited films do not exhibit any of the COSi 2 (111), (220) or (311) peaks normally associated with other preparation methods. The sheet resistance and r.m.s. roughness of the CoSi 2 films increase monotonically with annealing temperature. These results indicate that co-deposited films are epitaxial to the (100)-oriented SiGe substrate and suggest that low thermal budget, low resistivity contacts to strained SiGe can be grown with this method. Issues related to the presence of Ge at the CoSi 2substrate interface will be discussed.

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