Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

A. T. Sowers; J. A. Christman; M. D. Bremser; B. L. Ward; R. F. Davis; R. J. Nemanich

doi:10.1063/1.120052

Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

A. T. Sowers, J. A. Christman, M. D. Bremser, B. L. Ward, R. F. Davis, R. J. Nemanich

Research output: Contribution to journal › Article › peer-review

73 Scopus citations

Abstract

Cold cathode structures have been fabricated using AlN and graded AlGaN structures (deposited on n-type 6H-SiC) as the thin film emitting layer. The cathodes consist of an aluminum grid layer separated from the nitride layer by a SiO₂ layer and etched to form arrays of either 1, 3, or 5 μm holes through which the emitting nitride surface is exposed. After fabrication, a hydrogen plasma exposure was employed to activate the cathodes. Cathode devices with 5 μm holes displayed emission for up to 30 min before failing. Maximum emission currents ranged from 10-100 nA and required grid voltages ranging from 20-110 V. The grid currents were typically 1 to 10⁴ times the collector currents.

Original language	English (US)
Pages (from-to)	2289-2291
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	16
DOIs	https://doi.org/10.1063/1.120052
State	Published - Oct 20 1997
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.120052

Cite this

@article{349ccd652df14448b09c5c50f9150db2,

title = "Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications",

abstract = "Cold cathode structures have been fabricated using AlN and graded AlGaN structures (deposited on n-type 6H-SiC) as the thin film emitting layer. The cathodes consist of an aluminum grid layer separated from the nitride layer by a SiO2 layer and etched to form arrays of either 1, 3, or 5 μm holes through which the emitting nitride surface is exposed. After fabrication, a hydrogen plasma exposure was employed to activate the cathodes. Cathode devices with 5 μm holes displayed emission for up to 30 min before failing. Maximum emission currents ranged from 10-100 nA and required grid voltages ranging from 20-110 V. The grid currents were typically 1 to 104 times the collector currents.",

author = "Sowers, {A. T.} and Christman, {J. A.} and Bremser, {M. D.} and Ward, {B. L.} and Davis, {R. F.} and Nemanich, {R. J.}",

year = "1997",

month = oct,

day = "20",

doi = "10.1063/1.120052",

language = "English (US)",

volume = "71",

pages = "2289--2291",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "16",

}

TY - JOUR

T1 - Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

AU - Sowers, A. T.

AU - Christman, J. A.

AU - Bremser, M. D.

AU - Ward, B. L.

AU - Davis, R. F.

AU - Nemanich, R. J.

PY - 1997/10/20

Y1 - 1997/10/20

N2 - Cold cathode structures have been fabricated using AlN and graded AlGaN structures (deposited on n-type 6H-SiC) as the thin film emitting layer. The cathodes consist of an aluminum grid layer separated from the nitride layer by a SiO2 layer and etched to form arrays of either 1, 3, or 5 μm holes through which the emitting nitride surface is exposed. After fabrication, a hydrogen plasma exposure was employed to activate the cathodes. Cathode devices with 5 μm holes displayed emission for up to 30 min before failing. Maximum emission currents ranged from 10-100 nA and required grid voltages ranging from 20-110 V. The grid currents were typically 1 to 104 times the collector currents.

AB - Cold cathode structures have been fabricated using AlN and graded AlGaN structures (deposited on n-type 6H-SiC) as the thin film emitting layer. The cathodes consist of an aluminum grid layer separated from the nitride layer by a SiO2 layer and etched to form arrays of either 1, 3, or 5 μm holes through which the emitting nitride surface is exposed. After fabrication, a hydrogen plasma exposure was employed to activate the cathodes. Cathode devices with 5 μm holes displayed emission for up to 30 min before failing. Maximum emission currents ranged from 10-100 nA and required grid voltages ranging from 20-110 V. The grid currents were typically 1 to 104 times the collector currents.

UR - http://www.scopus.com/inward/record.url?scp=0000281515&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000281515&partnerID=8YFLogxK

U2 - 10.1063/1.120052

DO - 10.1063/1.120052

M3 - Article

AN - SCOPUS:0000281515

SN - 0003-6951

VL - 71

SP - 2289

EP - 2291

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this