Thin film Ti{plus 45 degree rule}6H-SiC interfacial reaction: high spatial resolution electron microscopy study

J. S. Bow, L. M. Porter, M. J. Kim, Ray Carpenter, R. F. Davis

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

The structure and chemistry of thin Ti films on Si-terminated vicinal (0001) α-SiC substrates was investigated by high-resolution imaging and high-spatial-resolution nanospectroscopy. The Ti was deposited on in-situ cleaned SiC substrates under UHV conditions by evaporation; subsequent post-deposition heat treatments were also performed under UHV conditions. Examination of as-deposited interfaces showed that Ti deposited epitaxially with basal plane/close-packed direction alignment on the substrate. No reaction zone was visible and the interface was chemically sharp. Lattice misfit was accomodated by interface dislocations. Post-deposition heat treatment at 700°C caused formation of Ti5Si3 and TiC reaction products at the Ti/SiC interface. The reaction product morphology was complex and dependent on reaction time. For short times (≈ 20 min) parabolic rate kinetics were obeyed, but for longer times (≈ 60 min) formation of Ti5Si3 dominated and the rate decreased. HREM image contrast of SiC, Ti5Si3 and TiC varied with position near the interfaces. Preliminary theoretical calculations indicated these apparent changes in structure resulted from local changes in orientation and thickness.

Original languageEnglish (US)
Pages (from-to)289-296
Number of pages8
JournalUltramicroscopy
Volume52
Issue number3-4
DOIs
StatePublished - Dec 1993

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation

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