THIN FILM KINETICS AND REACTIONS AT METAL-SILICON INTERFACES.

R. J. Nemanich; B. L. Stafford; J. R. Abelson; T. W. Sigmon

doi:10.1007/978-1-4615-7682-2_33

THIN FILM KINETICS AND REACTIONS AT METAL-SILICON INTERFACES.

R. J. Nemanich, B. L. Stafford, J. R. Abelson, T. W. Sigmon

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

Raman scattering and RBS measurements are used to characterize the initial interactions at metal-Si interfaces. The results indicate that for some metals, a disordered intermixed layer can precede the formation of an ordered silicide. The results are discussed in terms of the chemical energy and strain which result from the interdiffusion.

Original language	English (US)
Title of host publication	Unknown Host Publication Title
Publisher	Springer Verlag
Pages	155-158
Number of pages	4
ISBN (Print)	0387961089, 9780387961088
DOIs	https://doi.org/10.1007/978-1-4615-7682-2_33
State	Published - Jan 1 1985
Externally published	Yes

ASJC Scopus subject areas

General Engineering

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10.1007/978-1-4615-7682-2_33

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title = "THIN FILM KINETICS AND REACTIONS AT METAL-SILICON INTERFACES.",

abstract = "Raman scattering and RBS measurements are used to characterize the initial interactions at metal-Si interfaces. The results indicate that for some metals, a disordered intermixed layer can precede the formation of an ordered silicide. The results are discussed in terms of the chemical energy and strain which result from the interdiffusion.",

author = "Nemanich, {R. J.} and Stafford, {B. L.} and Abelson, {J. R.} and Sigmon, {T. W.}",

year = "1985",

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T1 - THIN FILM KINETICS AND REACTIONS AT METAL-SILICON INTERFACES.

AU - Nemanich, R. J.

AU - Stafford, B. L.

AU - Abelson, J. R.

AU - Sigmon, T. W.

PY - 1985/1/1

Y1 - 1985/1/1

N2 - Raman scattering and RBS measurements are used to characterize the initial interactions at metal-Si interfaces. The results indicate that for some metals, a disordered intermixed layer can precede the formation of an ordered silicide. The results are discussed in terms of the chemical energy and strain which result from the interdiffusion.

AB - Raman scattering and RBS measurements are used to characterize the initial interactions at metal-Si interfaces. The results indicate that for some metals, a disordered intermixed layer can precede the formation of an ordered silicide. The results are discussed in terms of the chemical energy and strain which result from the interdiffusion.

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U2 - 10.1007/978-1-4615-7682-2_33

DO - 10.1007/978-1-4615-7682-2_33

M3 - Conference contribution

AN - SCOPUS:0022247769

SN - 0387961089

SN - 9780387961088

SP - 155

EP - 158

BT - Unknown Host Publication Title

PB - Springer Verlag

ER -

THIN FILM KINETICS AND REACTIONS AT METAL-SILICON INTERFACES.

Abstract

ASJC Scopus subject areas

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