Thick crack-free AlGaN films deposited by facet-controlled epitaxial lateral overgrowth

R. Liu, A. Bell, Fernando Ponce, H. Amano, I. Akasaki, D. Cherns

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations

Abstract

Thick crack-free AlGaN films have been grown on inclined-facet GaN templates. Light emitting diodes with λ = 323 nm has been achieved on these epilayers. The GaN template was grown at a low temperature in order to obtain triangle-facet growth fronts. Subsequent growth of AlGaN on this template involving a lateral overgrowth process exhibits interesting properties. The microstructure and optical characterizations were done using transmission electron microscopy and cathodoluminescence. At the AlGaN/GaN interface, a high density of dislocations was created due to lattice mismatch strain. Another unexpected set of triangular boundaries was observed inside the AlGaN layer, which grew without any change of the growth parameters. These boundaries were found to arise from domains grown in different directions. Monochromatic cathodoluminescence images indicate that Al content is different between the vertically-grown and the laterally-grown domains, suggesting that lattice mismatch strain exists between them. Dislocations were created at these mismatched boundaries to relax the strain.

Original languageEnglish (US)
Title of host publicationPhysica Status Solidi C: Conferences
Pages2136-2140
Number of pages5
Edition7
DOIs
StatePublished - 2003
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: May 25 2003May 30 2003

Other

Other5th International Conference on Nitride Semiconductors, ICNS 2003
CountryJapan
CityNara
Period5/25/035/30/03

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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