Thermoelectric Properties of Sn-Doped Bi0.4Sb1.6Te3 Thin Films

Kwang Chon Kim; Beomjin Kwon; Hyun Jae Kim; Seung Hyub Baek; Chan Park; Seong Keun Kim; Jin Sang Kim

doi:10.1007/s11664-014-3483-9

Thermoelectric Properties of Sn-Doped Bi_0.4Sb_1.6Te₃ Thin Films

Kwang Chon Kim, Beomjin Kwon, Hyun Jae Kim, Seung Hyub Baek, Chan Park, Seong Keun Kim, Jin Sang Kim

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The effect of Sn doping on the thermoelectric properties of p-type Bi_0.4Sb_1.6Te₃ (BST) thin films was studied. Sn-doped BST films were grown on 4° tilted GaAs (001) substrates by metal–organic chemical vapor deposition. To control the Sn ion concentration in the films, we systematically controlled the dose of the Sn precursor by varying the H₂ flow rate from 0 sccm to 100 sccm. The hole carrier concentration increased as the H₂ flow rate was increased. Interestingly, the Seebeck coefficient of the films simultaneously increased with the carrier concentration when the H₂ flow rate was increased up to 60 sccm. This might be attributed to the formation of virtual bound states in the valence band by Sn doping. Consequently, the Sn ion doping contributed to the thermopower enhancement of the BST films.

Original language	English (US)
Pages (from-to)	1573-1578
Number of pages	6
Journal	Journal of Electronic Materials
Volume	44
Issue number	6
DOIs	https://doi.org/10.1007/s11664-014-3483-9
State	Published - Jun 1 2015
Externally published	Yes

Keywords

BiSbTe
MOCVD
Sn doping
thermoelectric

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1007/s11664-014-3483-9

Cite this

@article{cbd4a447f2104b88b58058da094cc47a,

title = "Thermoelectric Properties of Sn-Doped Bi0.4Sb1.6Te3 Thin Films",

abstract = "The effect of Sn doping on the thermoelectric properties of p-type Bi0.4Sb1.6Te3 (BST) thin films was studied. Sn-doped BST films were grown on 4° tilted GaAs (001) substrates by metal–organic chemical vapor deposition. To control the Sn ion concentration in the films, we systematically controlled the dose of the Sn precursor by varying the H2 flow rate from 0 sccm to 100 sccm. The hole carrier concentration increased as the H2 flow rate was increased. Interestingly, the Seebeck coefficient of the films simultaneously increased with the carrier concentration when the H2 flow rate was increased up to 60 sccm. This might be attributed to the formation of virtual bound states in the valence band by Sn doping. Consequently, the Sn ion doping contributed to the thermopower enhancement of the BST films.",

keywords = "BiSbTe, MOCVD, Sn doping, thermoelectric",

author = "Kim, {Kwang Chon} and Beomjin Kwon and Kim, {Hyun Jae} and Baek, {Seung Hyub} and Chan Park and Kim, {Seong Keun} and Kim, {Jin Sang}",

note = "Funding Information: This research was supported by the Korea Institute of Science and Technology (KIST) through the KIST–UNIST Partnership Program (2V03290) and the Technology Innovation Program (10046673, 10048261) funded by the Ministry of Trade, Industry, and Energy. Publisher Copyright: {\textcopyright} 2014, The Minerals, Metals & Materials Society.",

year = "2015",

month = jun,

day = "1",

doi = "10.1007/s11664-014-3483-9",

language = "English (US)",

volume = "44",

pages = "1573--1578",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "6",

}

TY - JOUR

T1 - Thermoelectric Properties of Sn-Doped Bi0.4Sb1.6Te3 Thin Films

AU - Kim, Kwang Chon

AU - Kwon, Beomjin

AU - Kim, Hyun Jae

AU - Baek, Seung Hyub

AU - Park, Chan

AU - Kim, Seong Keun

AU - Kim, Jin Sang

N1 - Funding Information: This research was supported by the Korea Institute of Science and Technology (KIST) through the KIST–UNIST Partnership Program (2V03290) and the Technology Innovation Program (10046673, 10048261) funded by the Ministry of Trade, Industry, and Energy. Publisher Copyright: © 2014, The Minerals, Metals & Materials Society.

PY - 2015/6/1

Y1 - 2015/6/1

N2 - The effect of Sn doping on the thermoelectric properties of p-type Bi0.4Sb1.6Te3 (BST) thin films was studied. Sn-doped BST films were grown on 4° tilted GaAs (001) substrates by metal–organic chemical vapor deposition. To control the Sn ion concentration in the films, we systematically controlled the dose of the Sn precursor by varying the H2 flow rate from 0 sccm to 100 sccm. The hole carrier concentration increased as the H2 flow rate was increased. Interestingly, the Seebeck coefficient of the films simultaneously increased with the carrier concentration when the H2 flow rate was increased up to 60 sccm. This might be attributed to the formation of virtual bound states in the valence band by Sn doping. Consequently, the Sn ion doping contributed to the thermopower enhancement of the BST films.

AB - The effect of Sn doping on the thermoelectric properties of p-type Bi0.4Sb1.6Te3 (BST) thin films was studied. Sn-doped BST films were grown on 4° tilted GaAs (001) substrates by metal–organic chemical vapor deposition. To control the Sn ion concentration in the films, we systematically controlled the dose of the Sn precursor by varying the H2 flow rate from 0 sccm to 100 sccm. The hole carrier concentration increased as the H2 flow rate was increased. Interestingly, the Seebeck coefficient of the films simultaneously increased with the carrier concentration when the H2 flow rate was increased up to 60 sccm. This might be attributed to the formation of virtual bound states in the valence band by Sn doping. Consequently, the Sn ion doping contributed to the thermopower enhancement of the BST films.

KW - BiSbTe

KW - MOCVD

KW - Sn doping

KW - thermoelectric

UR - http://www.scopus.com/inward/record.url?scp=84939986308&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84939986308&partnerID=8YFLogxK

U2 - 10.1007/s11664-014-3483-9

DO - 10.1007/s11664-014-3483-9

M3 - Article

AN - SCOPUS:84939986308

SN - 0361-5235

VL - 44

SP - 1573

EP - 1578

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 6

ER -