TY - GEN
T1 - Thermoelectric properties of silicon nanowires
AU - Ramayya, Edwin B.
AU - Vasileska, Dragica
AU - Goodnick, Stephen
AU - Knezevic, Irena
PY - 2008
Y1 - 2008
N2 - The thermoelectric figure of merit (ZT) of gated silicon nanowires with square cross section has been calculated by solving the Boltzmann transport equations for electrons and phonons. The electrical conductivity, electronic Seebeck coefficient, and electronic thermal conductivity were calculated by including electron scattering from confined acoustic phonons, intervalley phonons and imperfections at the Si/Si02 interface. Three-phonon scattering and boundary scattering were included in the calculation of the lattice thermal conductivity. The Seebeck coefficient, electrical conductivity, and thermal conductivity vary non-monotonically with the variation of the wire cross section mainly because of the non-uniform variation of the electron mobility with the wire cross section. In particular, when the wire cross section is decreased from 8x8 nm2 to 3 x 3 nm2, ZT increases initially, reaches a maximum value ZT = 0.11 for a 5 x 5 nm2 wire, and then decreases with further reduction of the wire cross section.
AB - The thermoelectric figure of merit (ZT) of gated silicon nanowires with square cross section has been calculated by solving the Boltzmann transport equations for electrons and phonons. The electrical conductivity, electronic Seebeck coefficient, and electronic thermal conductivity were calculated by including electron scattering from confined acoustic phonons, intervalley phonons and imperfections at the Si/Si02 interface. Three-phonon scattering and boundary scattering were included in the calculation of the lattice thermal conductivity. The Seebeck coefficient, electrical conductivity, and thermal conductivity vary non-monotonically with the variation of the wire cross section mainly because of the non-uniform variation of the electron mobility with the wire cross section. In particular, when the wire cross section is decreased from 8x8 nm2 to 3 x 3 nm2, ZT increases initially, reaches a maximum value ZT = 0.11 for a 5 x 5 nm2 wire, and then decreases with further reduction of the wire cross section.
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U2 - 10.1109/NANO.2008.106
DO - 10.1109/NANO.2008.106
M3 - Conference contribution
AN - SCOPUS:55349145629
SN - 9781424421046
T3 - 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
SP - 339
EP - 342
BT - 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
T2 - 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
Y2 - 18 August 2008 through 21 August 2008
ER -