Thermodynamics of paracrystalline silicon

P. M. Voyles, Michael Treacy, J. M. Gibson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Fluctuation microscopy experiments have shown that the as-deposited structure of amorphous silicon thin films is paracrystalline. A paracrystal consists of small (< 3 nm in diameter) topologically crystalline grains separated by a disordered matrix. Here we consider the thermodynamics of paracrystalline silicon as a function of the grain size and the temperature. We offer a simple model that qualitatively explains the observed metastability of the ordered structure at low temperature (300 K), the relaxation towards a more disordered structure at intermediate temperatures (600 K), and the recrystallization at high temperatures (1000 K).

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsH.N.G. Wadley, G.H. Gilmer, W.G. Barker
Pages47-52
Number of pages6
Volume616
StatePublished - 2000
Externally publishedYes
EventNew Methods, Mechanisms and Models of Vapor Deposition - San Francisco, CA, United States
Duration: Apr 24 2000Apr 26 2000

Other

OtherNew Methods, Mechanisms and Models of Vapor Deposition
CountryUnited States
CitySan Francisco, CA
Period4/24/004/26/00

Fingerprint

Silicon
Thermodynamics
Temperature
Amorphous silicon
Microscopic examination
Crystalline materials
Thin films
Experiments

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Voyles, P. M., Treacy, M., & Gibson, J. M. (2000). Thermodynamics of paracrystalline silicon. In H. N. G. Wadley, G. H. Gilmer, & W. G. Barker (Eds.), Materials Research Society Symposium - Proceedings (Vol. 616, pp. 47-52)

Thermodynamics of paracrystalline silicon. / Voyles, P. M.; Treacy, Michael; Gibson, J. M.

Materials Research Society Symposium - Proceedings. ed. / H.N.G. Wadley; G.H. Gilmer; W.G. Barker. Vol. 616 2000. p. 47-52.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Voyles, PM, Treacy, M & Gibson, JM 2000, Thermodynamics of paracrystalline silicon. in HNG Wadley, GH Gilmer & WG Barker (eds), Materials Research Society Symposium - Proceedings. vol. 616, pp. 47-52, New Methods, Mechanisms and Models of Vapor Deposition, San Francisco, CA, United States, 4/24/00.
Voyles PM, Treacy M, Gibson JM. Thermodynamics of paracrystalline silicon. In Wadley HNG, Gilmer GH, Barker WG, editors, Materials Research Society Symposium - Proceedings. Vol. 616. 2000. p. 47-52
Voyles, P. M. ; Treacy, Michael ; Gibson, J. M. / Thermodynamics of paracrystalline silicon. Materials Research Society Symposium - Proceedings. editor / H.N.G. Wadley ; G.H. Gilmer ; W.G. Barker. Vol. 616 2000. pp. 47-52
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