Thermodynamics of paracrystalline silicon

P. M. Voyles, Michael Treacy, J. M. Gibson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Fluctuation microscopy experiments have shown that the as-deposited structure of amorphous silicon thin films is paracrystalline. A paracrystal consists of small (< 3 nm in diameter) topologically crystalline grains separated by a disordered matrix. Here we consider the thermodynamics of paracrystalline silicon as a function of the grain size and the temperature. We offer a simple model that qualitatively explains the observed metastability of the ordered structure at low temperature (300 K), the relaxation towards a more disordered structure at intermediate temperatures (600 K), and the recrystallization at high temperatures (1000 K).

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsH.N.G. Wadley, G.H. Gilmer, W.G. Barker
Pages47-52
Number of pages6
Volume616
StatePublished - 2000
Externally publishedYes
EventNew Methods, Mechanisms and Models of Vapor Deposition - San Francisco, CA, United States
Duration: Apr 24 2000Apr 26 2000

Other

OtherNew Methods, Mechanisms and Models of Vapor Deposition
CountryUnited States
CitySan Francisco, CA
Period4/24/004/26/00

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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