Thermodynamic and kinetic processes involved in the growth of epitaxial GaN thin films

Nathan Newman, J. Ross, M. Rubin

Research output: Contribution to journalArticle

73 Citations (Scopus)

Abstract

Our experimental results using reactive magnetron sputtering, combined with earlier literature, are used to understand the thermodynamic and kinetic processes involved in GaN film growth and the limiting factors involved in the incorporation of nitrogen during the growth process. We show that GaN films fabricated with low pressure growth techniques (<0.1 Torr) such as sputtering and molecular beam epitaxy are formed under metastable conditions with a nonequilibrium kinetically limited reaction. For these methods, the growth process is controlled by a competition between the forward reaction, which depends on the arrival of activated nitrogen species at the growing surface, and the reverse reaction whose rate is limited by the unusually large kinetic barrier of decomposition of GaN. In practice, the thermally activated rate of decomposition sets an upper bound to the growth temperature.

Original languageEnglish (US)
Pages (from-to)1242-1244
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number11
DOIs
StatePublished - 1993
Externally publishedYes

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thermodynamics
kinetics
thin films
decomposition
nitrogen
arrivals
magnetron sputtering
reaction kinetics
molecular beam epitaxy
low pressure
sputtering
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Thermodynamic and kinetic processes involved in the growth of epitaxial GaN thin films. / Newman, Nathan; Ross, J.; Rubin, M.

In: Applied Physics Letters, Vol. 62, No. 11, 1993, p. 1242-1244.

Research output: Contribution to journalArticle

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