THERMODYNAMIC ANALYSIS AND KINETIC IMPLICATIONS OF CHEMICAL VAPOR DEPOSITION OF SiC FROM Si-C-Cl-H GAS SYSTEMS.

Gary S. Fischman, William Petuskey

Research output: Contribution to journalArticle

82 Citations (Scopus)

Abstract

Experimental results compiled from the literature were compared to thermodynamic calculations of the most stable proportion of condensed phases to deposit from gas mixtures of Si-C-Cl-H. The calculations indicated that the predominant gas molecules participating in a deposition process are chlorides and chlorosilanes for silicon and methane and acetylene for carbon. The mismatch of the calculated and experimentally determined phase boundaries at 1473 and 1600 K led to the conclusion that silicon deposition occurs faster than carbon deposition in proportion to their partial pressures.

Original languageEnglish (US)
Pages (from-to)185-190
Number of pages6
JournalJournal of the American Ceramic Society
Volume68
Issue number4
StatePublished - Apr 1985
Externally publishedYes

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Chemical vapor deposition
Thermodynamics
Silicon
Kinetics
Carbon
Acetylene
Methane
Phase boundaries
Gas mixtures
Partial pressure
Chlorides
Deposits
Gases
Molecules

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

THERMODYNAMIC ANALYSIS AND KINETIC IMPLICATIONS OF CHEMICAL VAPOR DEPOSITION OF SiC FROM Si-C-Cl-H GAS SYSTEMS. / Fischman, Gary S.; Petuskey, William.

In: Journal of the American Ceramic Society, Vol. 68, No. 4, 04.1985, p. 185-190.

Research output: Contribution to journalArticle

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