Abstract

In this paper we report a study that correlates the properties of superconducting MgB2 thin films with molecular-beam-epitaxy deposition parameters. We show the utility of using a thermochemical analysis of MgB2 synthesis to predict optimal growth conditions. The growth of stoichiometric films with improved crystalline quality can be achieved at enhanced temperatures using high reactant fluxes. High B flux enhances the sticking coefficient of Mg and facilitates higher growth temperatures and improved structural and electrical properties. With a Mg flux of ~16Å/s and a substrate temperature of 300°C, a superconducting transition temperature (Tc) of 37.7K with a narrow transition width (ΔTc<1K) was observed. Our work shows that a growth model must include the strong dependence of the Mg sticking coefficient on B flux.

Original languageEnglish (US)
Pages (from-to)107-112
Number of pages6
JournalJournal of Crystal Growth
Volume270
Issue number1-2
DOIs
StatePublished - Sep 15 2004

Fingerprint

Molecular beam epitaxy
molecular beam epitaxy
Fluxes
synthesis
Superconducting films
Growth temperature
coefficients
Superconducting transition temperature
Structural properties
Electric properties
transition temperature
electrical properties
Crystalline materials
Temperature
temperature
Substrates
thin films

Keywords

  • A1. Molecular beam epitaxy
  • B2. Superconducting materials

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Thermochemical analysis of MgB2 synthesis by molecular-beam epitaxy. / Kim, Jihoon; Singh, Rakesh; Rowell, J. M.; Newman, Nathan; Gu, Lin; Smith, David.

In: Journal of Crystal Growth, Vol. 270, No. 1-2, 15.09.2004, p. 107-112.

Research output: Contribution to journalArticle

Kim, Jihoon ; Singh, Rakesh ; Rowell, J. M. ; Newman, Nathan ; Gu, Lin ; Smith, David. / Thermochemical analysis of MgB2 synthesis by molecular-beam epitaxy. In: Journal of Crystal Growth. 2004 ; Vol. 270, No. 1-2. pp. 107-112.
@article{76d86b76252b4d2180c6b068b5a3a20f,
title = "Thermochemical analysis of MgB2 synthesis by molecular-beam epitaxy",
abstract = "In this paper we report a study that correlates the properties of superconducting MgB2 thin films with molecular-beam-epitaxy deposition parameters. We show the utility of using a thermochemical analysis of MgB2 synthesis to predict optimal growth conditions. The growth of stoichiometric films with improved crystalline quality can be achieved at enhanced temperatures using high reactant fluxes. High B flux enhances the sticking coefficient of Mg and facilitates higher growth temperatures and improved structural and electrical properties. With a Mg flux of ~16{\AA}/s and a substrate temperature of 300°C, a superconducting transition temperature (Tc) of 37.7K with a narrow transition width (ΔTc<1K) was observed. Our work shows that a growth model must include the strong dependence of the Mg sticking coefficient on B flux.",
keywords = "A1. Molecular beam epitaxy, B2. Superconducting materials",
author = "Jihoon Kim and Rakesh Singh and Rowell, {J. M.} and Nathan Newman and Lin Gu and David Smith",
year = "2004",
month = "9",
day = "15",
doi = "10.1016/j.jcrysgro.2004.05.116",
language = "English (US)",
volume = "270",
pages = "107--112",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Thermochemical analysis of MgB2 synthesis by molecular-beam epitaxy

AU - Kim, Jihoon

AU - Singh, Rakesh

AU - Rowell, J. M.

AU - Newman, Nathan

AU - Gu, Lin

AU - Smith, David

PY - 2004/9/15

Y1 - 2004/9/15

N2 - In this paper we report a study that correlates the properties of superconducting MgB2 thin films with molecular-beam-epitaxy deposition parameters. We show the utility of using a thermochemical analysis of MgB2 synthesis to predict optimal growth conditions. The growth of stoichiometric films with improved crystalline quality can be achieved at enhanced temperatures using high reactant fluxes. High B flux enhances the sticking coefficient of Mg and facilitates higher growth temperatures and improved structural and electrical properties. With a Mg flux of ~16Å/s and a substrate temperature of 300°C, a superconducting transition temperature (Tc) of 37.7K with a narrow transition width (ΔTc<1K) was observed. Our work shows that a growth model must include the strong dependence of the Mg sticking coefficient on B flux.

AB - In this paper we report a study that correlates the properties of superconducting MgB2 thin films with molecular-beam-epitaxy deposition parameters. We show the utility of using a thermochemical analysis of MgB2 synthesis to predict optimal growth conditions. The growth of stoichiometric films with improved crystalline quality can be achieved at enhanced temperatures using high reactant fluxes. High B flux enhances the sticking coefficient of Mg and facilitates higher growth temperatures and improved structural and electrical properties. With a Mg flux of ~16Å/s and a substrate temperature of 300°C, a superconducting transition temperature (Tc) of 37.7K with a narrow transition width (ΔTc<1K) was observed. Our work shows that a growth model must include the strong dependence of the Mg sticking coefficient on B flux.

KW - A1. Molecular beam epitaxy

KW - B2. Superconducting materials

UR - http://www.scopus.com/inward/record.url?scp=4344646212&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4344646212&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2004.05.116

DO - 10.1016/j.jcrysgro.2004.05.116

M3 - Article

VL - 270

SP - 107

EP - 112

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-2

ER -