Thermionic field emission from nanocrystalline diamond-coated silicon tip arrays

J. M. Garguilo, F. A.M. Koeck, R. J. Nemanich, X. C. Xiao, J. A. Carlisle, O. Auciello

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

Thermionic field emission properties of nitrogen doped ultrananocrystalline diamond (UNCD) coated silicon tip arrays are examined using thermionic field emission electron microscopy (TFEEM). Nitrogen doping has been shown to enhance the emission properties of diamond by the introduction of a donor level 1.7eV below the conduction band minimum. The field enhancing geometry of the films initiates accelerated electron emission at the tipped structures which may be beneficial to thermionic energy converter design where space charge effects can significantly limit attainable current densities. Two temperature regimes of electron emission are observed; 600-800°C, where the emission is enabled because of the H passivation and 900-1100°C, where the emission is attributed to tunneling from nitrogen related states through the barrier of a clean diamond surface.

Original languageEnglish (US)
Article number165404
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume72
Issue number16
DOIs
StatePublished - Oct 15 2005
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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