Thermally-oxidized HfO 2 on Se-passivated n-type Si(100)

Meng Tao, Xiaolong Yang, Wiley P. Kirk

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Se passivation of Si(100) creates a surface which is free of dangling bonds. Electrically, the passivation may also result in a surface free of surface states. It is interesting to examine the effect of Se passivation on the electrical properties of the high-k dielectric/Si(100) interface. In this paper, we report our results on interface engineering between HfO 2 and n-type Si(100) with Se passivation. Hf of ∼40 Å was deposited on Se-passivated Si(100) by e-beam evaporation and then oxidized in O 3 or O 2 to form HfO 2. I-V and C-V characterization was performed to examine the electrical properties of the HfO 2/Se/Si(100) interface. Os oxidation seems to over-oxidize into the n-type Si substrate, causing a large negative shift in flat-band voltage. Samples annealed in O 2 below ∼350°C show much improved properties: a smaller EOT, a flat-band voltage close to the theoretical value, and a smaller leakage current. Our results also demonstrate that Se passivation of Si(100) suppresses Si oxidation in O 2 up to 600°C.

Original languageEnglish (US)
Title of host publicationProceedings - Electrochemical Society
EditorsR. Singh, H. Iwai, R.R. Tummala, S.C. Sun
Pages425-433
Number of pages9
Volume4
Publication statusPublished - 2004
Externally publishedYes
EventDielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium - Honolulu, HI, United States
Duration: Oct 3 2004Oct 8 2004

Other

OtherDielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium
CountryUnited States
CityHonolulu, HI
Period10/3/0410/8/04

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Tao, M., Yang, X., & Kirk, W. P. (2004). Thermally-oxidized HfO 2 on Se-passivated n-type Si(100). In R. Singh, H. Iwai, R. R. Tummala, & S. C. Sun (Eds.), Proceedings - Electrochemical Society (Vol. 4, pp. 425-433)