Abstract
Se passivation of Si(100) creates a surface which is free of dangling bonds. Electrically, the passivation may also result in a surface free of surface states. It is interesting to examine the effect of Se passivation on the electrical properties of the high-k dielectric/Si(100) interface. In this paper, we report our results on interface engineering between HfO 2 and n-type Si(100) with Se passivation. Hf of ∼40 Å was deposited on Se-passivated Si(100) by e-beam evaporation and then oxidized in O 3 or O 2 to form HfO 2. I-V and C-V characterization was performed to examine the electrical properties of the HfO 2/Se/Si(100) interface. Os oxidation seems to over-oxidize into the n-type Si substrate, causing a large negative shift in flat-band voltage. Samples annealed in O 2 below ∼350°C show much improved properties: a smaller EOT, a flat-band voltage close to the theoretical value, and a smaller leakage current. Our results also demonstrate that Se passivation of Si(100) suppresses Si oxidation in O 2 up to 600°C.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings - Electrochemical Society |
| Editors | R. Singh, H. Iwai, R.R. Tummala, S.C. Sun |
| Pages | 425-433 |
| Number of pages | 9 |
| Volume | 4 |
| State | Published - 2004 |
| Externally published | Yes |
| Event | Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium - Honolulu, HI, United States Duration: Oct 3 2004 → Oct 8 2004 |
Other
| Other | Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium |
|---|---|
| Country/Territory | United States |
| City | Honolulu, HI |
| Period | 10/3/04 → 10/8/04 |
ASJC Scopus subject areas
- General Engineering