THERMALLY INDUCED MICRO-DEFECTS IN CZ SILICON: A HIGH RESOLUTION ELECTRON MICROSCOPY STUDY.

F. A. Ponce, S. Hahn, T. Yamashita, M. Scott, J. R. Carruthers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	Institute of Physics Conference Series
Publisher	Inst of Physics
Pages	65-70
Number of pages	6
Edition	67
ISBN (Print)	0854981586
State	Published - 1983
Externally published	Yes

Name	Institute of Physics Conference Series
Number	67
ISSN (Print)	0373-0751

ASJC Scopus subject areas

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title = "THERMALLY INDUCED MICRO-DEFECTS IN CZ SILICON: A HIGH RESOLUTION ELECTRON MICROSCOPY STUDY.",

author = "Ponce, {F. A.} and S. Hahn and T. Yamashita and M. Scott and Carruthers, {J. R.}",

year = "1983",

language = "English (US)",

isbn = "0854981586",

series = "Institute of Physics Conference Series",

publisher = "Inst of Physics",

number = "67",

pages = "65--70",

booktitle = "Institute of Physics Conference Series",

edition = "67",

}

TY - GEN

T1 - THERMALLY INDUCED MICRO-DEFECTS IN CZ SILICON

T2 - A HIGH RESOLUTION ELECTRON MICROSCOPY STUDY.

AU - Ponce, F. A.

AU - Hahn, S.

AU - Yamashita, T.

AU - Scott, M.

AU - Carruthers, J. R.

PY - 1983

Y1 - 1983

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M3 - Conference contribution

AN - SCOPUS:0020892620

SN - 0854981586

T3 - Institute of Physics Conference Series

SP - 65

EP - 70

BT - Institute of Physics Conference Series

PB - Inst of Physics

ER -