THERMALLY INDUCED MICRO-DEFECTS IN CZ SILICON: A HIGH RESOLUTION ELECTRON MICROSCOPY STUDY.

F. A. Ponce; S. Hahn; T. Yamashita; M. Scott; J. R. Carruthers

THERMALLY INDUCED MICRO-DEFECTS IN CZ SILICON: A HIGH RESOLUTION ELECTRON MICROSCOPY STUDY.

F. A. Ponce, S. Hahn, T. Yamashita, M. Scott, J. R. Carruthers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	Institute of Physics Conference Series
Publisher	Inst of Physics
Pages	65-70
Number of pages	6
Edition	67
ISBN (Print)	0854981586
State	Published - 1983
Externally published	Yes

Publication series

Name	Institute of Physics Conference Series
Number	67
ISSN (Print)	0373-0751

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

THERMALLY INDUCED MICRO-DEFECTS IN CZ SILICON : A HIGH RESOLUTION ELECTRON MICROSCOPY STUDY. / Ponce, F. A.; Hahn, S.; Yamashita, T.; Scott, M.; Carruthers, J. R.

Institute of Physics Conference Series. 67. ed. Inst of Physics, 1983. p. 65-70 (Institute of Physics Conference Series; No. 67).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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author = "Ponce, {F. A.} and S. Hahn and T. Yamashita and M. Scott and Carruthers, {J. R.}",

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AU - Scott, M.

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M3 - Conference contribution

AN - SCOPUS:0020892620

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T3 - Institute of Physics Conference Series

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BT - Institute of Physics Conference Series

PB - Inst of Physics

ER -

THERMALLY INDUCED MICRO-DEFECTS IN CZ SILICON: A HIGH RESOLUTION ELECTRON MICROSCOPY STUDY.

Publication series

ASJC Scopus subject areas

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