Thermally enhanced photoinduced electron emission from nitrogen-doped diamond films on silicon substrates

Tianyin Sun, Franz A M Koeck, Aram Rezikyan, Michael Treacy, Robert Nemanich

Research output: Contribution to journalArticle

26 Scopus citations

Abstract

This work presents a spectroscopic study of the thermally enhanced photoinduced electron emission from nitrogen-doped diamond films prepared on p-type silicon substrates. It has been shown that photon-enhanced thermionic emission (PETE) can substantially enhance thermionic emission intensity from a p-type semiconductor. An n-type diamond/p-type silicon structure was illuminated with 400-450 nm light, and the spectra of the emitted electrons showed a work function less than 2 eV and nearly an order of magnitude increase in emission intensity as the temperature was increased from ambient to ∼400 °C. Thermionic emission was negligible in this temperature range. The results are modeled in terms of contributions from PETE and direct photoelectron emission, and the large increase is consistent with a PETE component. The results indicate possible application in combined solar/thermal energy conversion devices.

Original languageEnglish (US)
Article number121302
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume90
Issue number12
DOIs
StatePublished - Sep 15 2014

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Thermally enhanced photoinduced electron emission from nitrogen-doped diamond films on silicon substrates'. Together they form a unique fingerprint.

  • Cite this