Thermal stability of Pt, Pd, Ni on GaN

K. J. Duxstad, E. E. Haller, K. M. Yu, M. T. Hirsch, W. R. Imler, D. A. Steigerwald, Fernando Ponce, L. T. Romano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Scopus citations

Abstract

The development of reliable Ohmic and Schottky contacts on GaN will require an understanding of the thermal stability and metallurgy of metal-GaN contact structures. We investigated the behavior of Pt, Pd, and Ni on GaN as a function of annealing temperature. Rutherford backscattering spectrometry, x-ray diffraction, and scanning electron microscopy were used to characterize the interface and surface behavior. 800A thin metal films were deposited by sputtering on 2μm GaN films grown by metal organic chemical vapor deposition on sapphire substrates. No reactions occur in the Pt, Pd, and Ni systems with annealing up to 800°C. The Pt film begins to form submicron spheres and islands after annealing above 600°C. The Pd and Ni films begin to island with annealing above 700°C. Below these temperatures no structural changes were observed.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsF.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar
PublisherMaterials Research Society
Pages1049-1054
Number of pages6
Volume449
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: Dec 2 1996Dec 6 1996

Other

OtherProceedings of the 1996 MRS Fall Symposium
CityBoston, MA, USA
Period12/2/9612/6/96

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Duxstad, K. J., Haller, E. E., Yu, K. M., Hirsch, M. T., Imler, W. R., Steigerwald, D. A., ... Romano, L. T. (1997). Thermal stability of Pt, Pd, Ni on GaN. In F. A. Ponce, T. D. Moustakas, I. Akasaki, & B. A. Monemar (Eds.), Materials Research Society Symposium - Proceedings (Vol. 449, pp. 1049-1054). Materials Research Society.