The interface between Ti and Se-passivated n-type Si(001) was analyzed for thermal stability where As-deposited Ti contacts show ohmic characteristics. The Se-passivated samples were more resistant to Schottky transition after annealing at 200°C to 480°C in air as compared to bare samples. The passivated samples were ohmic at 400°C while bare samples turn to Schottky below 300°C. The capacitance-voltage and activation-energy methods were used to determine Schottky barrier heights.
ASJC Scopus subject areas
- Physics and Astronomy(all)