Thermal stability of ohmic contacts between Ti and Se-passivated n-type Si(001)

Darshak Udeshi, Eduardo Maldonado, Yuqing Xu, Meng Tao, Wiley P. Kirk

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Abstract

The interface between Ti and Se-passivated n-type Si(001) was analyzed for thermal stability where As-deposited Ti contacts show ohmic characteristics. The Se-passivated samples were more resistant to Schottky transition after annealing at 200°C to 480°C in air as compared to bare samples. The passivated samples were ohmic at 400°C while bare samples turn to Schottky below 300°C. The capacitance-voltage and activation-energy methods were used to determine Schottky barrier heights.

Original languageEnglish (US)
Pages (from-to)4219-4222
Number of pages4
JournalJournal of Applied Physics
Volume95
Issue number8
DOIs
StatePublished - Apr 15 2004
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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