Thermal stability of ohmic contacts between Ti and Se-passivated n-type Si(001)

Darshak Udeshi, Eduardo Maldonado, Yuqing Xu, Meng Tao, Wiley P. Kirk

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The interface between Ti and Se-passivated n-type Si(001) was analyzed for thermal stability where As-deposited Ti contacts show ohmic characteristics. The Se-passivated samples were more resistant to Schottky transition after annealing at 200°C to 480°C in air as compared to bare samples. The passivated samples were ohmic at 400°C while bare samples turn to Schottky below 300°C. The capacitance-voltage and activation-energy methods were used to determine Schottky barrier heights.

Original languageEnglish (US)
Pages (from-to)4219-4222
Number of pages4
JournalJournal of Applied Physics
Volume95
Issue number8
DOIs
StatePublished - Apr 15 2004
Externally publishedYes

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electric contacts
thermal stability
energy methods
capacitance
activation energy
annealing
air
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Thermal stability of ohmic contacts between Ti and Se-passivated n-type Si(001). / Udeshi, Darshak; Maldonado, Eduardo; Xu, Yuqing; Tao, Meng; Kirk, Wiley P.

In: Journal of Applied Physics, Vol. 95, No. 8, 15.04.2004, p. 4219-4222.

Research output: Contribution to journalArticle

Udeshi, Darshak ; Maldonado, Eduardo ; Xu, Yuqing ; Tao, Meng ; Kirk, Wiley P. / Thermal stability of ohmic contacts between Ti and Se-passivated n-type Si(001). In: Journal of Applied Physics. 2004 ; Vol. 95, No. 8. pp. 4219-4222.
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