Thermal stability of ohmic contacts between Ti and Se-passivated n-type Si(001)

Darshak Udeshi; Eduardo Maldonado; Yuqing Xu; Meng Tao; Wiley P. Kirk

doi:10.1063/1.1687047

Thermal stability of ohmic contacts between Ti and Se-passivated n-type Si(001)

Darshak Udeshi, Eduardo Maldonado, Yuqing Xu, Meng Tao, Wiley P. Kirk

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The interface between Ti and Se-passivated n-type Si(001) was analyzed for thermal stability where As-deposited Ti contacts show ohmic characteristics. The Se-passivated samples were more resistant to Schottky transition after annealing at 200°C to 480°C in air as compared to bare samples. The passivated samples were ohmic at 400°C while bare samples turn to Schottky below 300°C. The capacitance-voltage and activation-energy methods were used to determine Schottky barrier heights.

Original language	English (US)
Pages (from-to)	4219-4222
Number of pages	4
Journal	Journal of Applied Physics
Volume	95
Issue number	8
DOIs	https://doi.org/10.1063/1.1687047
State	Published - Apr 15 2004
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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@article{18c82e374dce497fbb4dbb0d37875fb9,

title = "Thermal stability of ohmic contacts between Ti and Se-passivated n-type Si(001)",

abstract = "The interface between Ti and Se-passivated n-type Si(001) was analyzed for thermal stability where As-deposited Ti contacts show ohmic characteristics. The Se-passivated samples were more resistant to Schottky transition after annealing at 200°C to 480°C in air as compared to bare samples. The passivated samples were ohmic at 400°C while bare samples turn to Schottky below 300°C. The capacitance-voltage and activation-energy methods were used to determine Schottky barrier heights.",

author = "Darshak Udeshi and Eduardo Maldonado and Yuqing Xu and Meng Tao and Kirk, {Wiley P.}",

year = "2004",

month = apr,

day = "15",

doi = "10.1063/1.1687047",

language = "English (US)",

volume = "95",

pages = "4219--4222",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "8",

}

TY - JOUR

T1 - Thermal stability of ohmic contacts between Ti and Se-passivated n-type Si(001)

AU - Udeshi, Darshak

AU - Maldonado, Eduardo

AU - Xu, Yuqing

AU - Tao, Meng

AU - Kirk, Wiley P.

PY - 2004/4/15

Y1 - 2004/4/15

N2 - The interface between Ti and Se-passivated n-type Si(001) was analyzed for thermal stability where As-deposited Ti contacts show ohmic characteristics. The Se-passivated samples were more resistant to Schottky transition after annealing at 200°C to 480°C in air as compared to bare samples. The passivated samples were ohmic at 400°C while bare samples turn to Schottky below 300°C. The capacitance-voltage and activation-energy methods were used to determine Schottky barrier heights.

AB - The interface between Ti and Se-passivated n-type Si(001) was analyzed for thermal stability where As-deposited Ti contacts show ohmic characteristics. The Se-passivated samples were more resistant to Schottky transition after annealing at 200°C to 480°C in air as compared to bare samples. The passivated samples were ohmic at 400°C while bare samples turn to Schottky below 300°C. The capacitance-voltage and activation-energy methods were used to determine Schottky barrier heights.

UR - http://www.scopus.com/inward/record.url?scp=2342463728&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2342463728&partnerID=8YFLogxK

U2 - 10.1063/1.1687047

DO - 10.1063/1.1687047

M3 - Article

AN - SCOPUS:2342463728

SN - 0021-8979

VL - 95

SP - 4219

EP - 4222

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Thermal stability of ohmic contacts between Ti and Se-passivated n-type Si(001)

Abstract

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