TY - GEN
T1 - Thermal stability of low resistance ohmic contacts between Ti and Se-passivated N-type Si(001)
AU - Udeshi, Darshak
AU - Maldonado, Eduardo
AU - Xu, Yuqing
AU - Tao, Meng
AU - Kirk, Wiley P.
PY - 2006
Y1 - 2006
N2 - The thermal stability of the interface between Ti and Se-passivated n-type Si(001) is investigated. As-deposited Ti contacts show ohmic characteristics. After annealing at temperatures from 200°C to 480°C in air, the Se-passivated samples are much more resistant to Schottky transition as compared to the bare samples. The bare samples turn to Schottky at 300°C, whereas the passivated samples are ohmic all the way to 400°C. A difference of over 100°C is observed between the two types of samples. Schottky barrier heights are determined using capacitance-voltage and activation-energy methods. The bare samples reach a maximum barrier height of 0.39eV as determined by activation-energy measurements, while the passivated samples saturate at 0.19eV. We deduce that a monolayer of Se suppresses silicidation between Ti and Si by eliminating dangling bonds on Si(001).
AB - The thermal stability of the interface between Ti and Se-passivated n-type Si(001) is investigated. As-deposited Ti contacts show ohmic characteristics. After annealing at temperatures from 200°C to 480°C in air, the Se-passivated samples are much more resistant to Schottky transition as compared to the bare samples. The bare samples turn to Schottky at 300°C, whereas the passivated samples are ohmic all the way to 400°C. A difference of over 100°C is observed between the two types of samples. Schottky barrier heights are determined using capacitance-voltage and activation-energy methods. The bare samples reach a maximum barrier height of 0.39eV as determined by activation-energy measurements, while the passivated samples saturate at 0.19eV. We deduce that a monolayer of Se suppresses silicidation between Ti and Si by eliminating dangling bonds on Si(001).
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M3 - Conference contribution
AN - SCOPUS:33745950113
SN - 156677425X
SN - 9781566774253
T3 - Proceedings - Electrochemical Society
SP - 316
EP - 325
BT - Interfaces in Electronic Materials - Proceedings of the International Symposium
T2 - 204th Electrochemical Society Fall Meeting
Y2 - 12 October 2003 through 16 October 2003
ER -