Thermal stability of low resistance ohmic contacts between Ti and Se-passivated N-type Si(001)

Darshak Udeshi, Eduardo Maldonado, Yuqing Xu, Meng Tao, Wiley P. Kirk

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The thermal stability of the interface between Ti and Se-passivated n-type Si(001) is investigated. As-deposited Ti contacts show ohmic characteristics. After annealing at temperatures from 200°C to 480°C in air, the Se-passivated samples are much more resistant to Schottky transition as compared to the bare samples. The bare samples turn to Schottky at 300°C, whereas the passivated samples are ohmic all the way to 400°C. A difference of over 100°C is observed between the two types of samples. Schottky barrier heights are determined using capacitance-voltage and activation-energy methods. The bare samples reach a maximum barrier height of 0.39eV as determined by activation-energy measurements, while the passivated samples saturate at 0.19eV. We deduce that a monolayer of Se suppresses silicidation between Ti and Si by eliminating dangling bonds on Si(001).

Original languageEnglish (US)
Title of host publicationProceedings - Electrochemical Society
Number of pages10
VolumePV 2003-31
Publication statusPublished - 2006
Externally publishedYes
Event204th Electrochemical Society Fall Meeting - Orlando, FL, United States
Duration: Oct 12 2003Oct 16 2003


Other204th Electrochemical Society Fall Meeting
CountryUnited States
CityOrlando, FL


ASJC Scopus subject areas

  • Engineering(all)

Cite this

Udeshi, D., Maldonado, E., Xu, Y., Tao, M., & Kirk, W. P. (2006). Thermal stability of low resistance ohmic contacts between Ti and Se-passivated N-type Si(001). In Proceedings - Electrochemical Society (Vol. PV 2003-31, pp. 316-325)