Abstract

In this letter, we demonstrate the stability of Te-Ti thin films as a barrier against Cu after thermal annealing. Te-Ti chalcogenide glass films of composition Te0.20Ti0.70O0.10 and thickness 35 nm are annealed in vacuum for up to 30 min at several temperatures up to 600 C. Four-point-probe analysis results show that the Cu layers are stable up to 500 C, with abnormal increases in resistance after annealing at 600 C. The Te-Ti thin film serves as a barrier to thermal Cu diffusion up to 500 C, as revealed using Rutherford backscattering spectrometry. X-ray diffractometry indicates Cu grain growth up to 500 C and phase instability of the Te-Ti barrier at 600 C. These results indicate the potential of Te-Ti thin films as a copper diffusion barrier in high temperature microelectronics and integrated circuits.

Original languageEnglish (US)
Pages (from-to)100-102
Number of pages3
JournalMaterials Letters
Volume113
DOIs
StatePublished - 2013

Fingerprint

Copper
Thermodynamic stability
thermal stability
Thin films
copper
thin films
Annealing
Diffusion barriers
Rutherford backscattering spectroscopy
Grain growth
Microelectronics
X ray diffraction analysis
Spectrometry
annealing
Integrated circuits
microelectronics
Vacuum
integrated circuits
Glass
backscattering

Keywords

  • Chalcogenide
  • Diffusion barrier
  • Thin films

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Thermal stability of copper on Te-Ti thin films. / Roos, Benjamin; Das, Sayantan; Alford, Terry.

In: Materials Letters, Vol. 113, 2013, p. 100-102.

Research output: Contribution to journalArticle

Roos, Benjamin ; Das, Sayantan ; Alford, Terry. / Thermal stability of copper on Te-Ti thin films. In: Materials Letters. 2013 ; Vol. 113. pp. 100-102.
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AB - In this letter, we demonstrate the stability of Te-Ti thin films as a barrier against Cu after thermal annealing. Te-Ti chalcogenide glass films of composition Te0.20Ti0.70O0.10 and thickness 35 nm are annealed in vacuum for up to 30 min at several temperatures up to 600 C. Four-point-probe analysis results show that the Cu layers are stable up to 500 C, with abnormal increases in resistance after annealing at 600 C. The Te-Ti thin film serves as a barrier to thermal Cu diffusion up to 500 C, as revealed using Rutherford backscattering spectrometry. X-ray diffractometry indicates Cu grain growth up to 500 C and phase instability of the Te-Ti barrier at 600 C. These results indicate the potential of Te-Ti thin films as a copper diffusion barrier in high temperature microelectronics and integrated circuits.

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