Abstract

In this letter, we demonstrate the stability of Te-Ti thin films as a barrier against Cu after thermal annealing. Te-Ti chalcogenide glass films of composition Te0.20Ti0.70O0.10 and thickness 35 nm are annealed in vacuum for up to 30 min at several temperatures up to 600 C. Four-point-probe analysis results show that the Cu layers are stable up to 500 C, with abnormal increases in resistance after annealing at 600 C. The Te-Ti thin film serves as a barrier to thermal Cu diffusion up to 500 C, as revealed using Rutherford backscattering spectrometry. X-ray diffractometry indicates Cu grain growth up to 500 C and phase instability of the Te-Ti barrier at 600 C. These results indicate the potential of Te-Ti thin films as a copper diffusion barrier in high temperature microelectronics and integrated circuits.

Original languageEnglish (US)
Pages (from-to)100-102
Number of pages3
JournalMaterials Letters
Volume113
DOIs
StatePublished - Oct 16 2013

    Fingerprint

Keywords

  • Chalcogenide
  • Diffusion barrier
  • Thin films

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this