Thermal stability and electrical properties of Ag(Al) metallization

Hyunchul C. Kim, N. David Theodore, James W. Mayer, Terry Alford

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The thermal stability and electrical resistivity of Ag(Al) alloy thin films on SiO 2 are investigated and compared to pure Ag thin films by performing various analyses: Rutherford backscattering spectrometry (RBS), X-ray diffractometry (XRD), transmission electron microscopy (TEM), and four-point probe. The susceptibility to agglomeration of Ag on SiO 2 layer is a drawback of Ag metallization. Ag(Al) thin films show good thermal stability on SiO 2 layer without any diffusion barrier. The films are stable up to 600°C for 1 hour in vacuum. Electrical resistivity of as-deposited Ag (5 at % Al) thin film is slightly higher than that of pure Ag thin film. However, the resistivity of Ag(Al) samples annealed at high temperatures (up to 600°C for 1 hour in vacuum) remains constant due to the improvement of thermal stability (large reduction of agglomeration). This finding can impact metallization for thin film transistors (TFT) for displays, including flexible displays, and high-speed electronics due to lower resistivity value compared to Cu thin film.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsR.J. Carter, C.S. Hau-Riege, G.M. Kloster, T.-M. Lu, S.E. Schulz
Pages209-214
Number of pages6
Volume812
StatePublished - 2004
EventMaterials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2004 - San Francisco, CA, United States
Duration: Apr 13 2004Apr 15 2004

Other

OtherMaterials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2004
CountryUnited States
CitySan Francisco, CA
Period4/13/044/15/04

Fingerprint

Metallizing
Electric properties
Thermodynamic stability
Thin films
Agglomeration
Vacuum
Flexible displays
Diffusion barriers
Rutherford backscattering spectroscopy
Thin film transistors
X ray diffraction analysis
Spectrometry
Electronic equipment
Display devices
Transmission electron microscopy
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Kim, H. C., David Theodore, N., Mayer, J. W., & Alford, T. (2004). Thermal stability and electrical properties of Ag(Al) metallization. In R. J. Carter, C. S. Hau-Riege, G. M. Kloster, T-M. Lu, & S. E. Schulz (Eds.), Materials Research Society Symposium Proceedings (Vol. 812, pp. 209-214)

Thermal stability and electrical properties of Ag(Al) metallization. / Kim, Hyunchul C.; David Theodore, N.; Mayer, James W.; Alford, Terry.

Materials Research Society Symposium Proceedings. ed. / R.J. Carter; C.S. Hau-Riege; G.M. Kloster; T.-M. Lu; S.E. Schulz. Vol. 812 2004. p. 209-214.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, HC, David Theodore, N, Mayer, JW & Alford, T 2004, Thermal stability and electrical properties of Ag(Al) metallization. in RJ Carter, CS Hau-Riege, GM Kloster, T-M Lu & SE Schulz (eds), Materials Research Society Symposium Proceedings. vol. 812, pp. 209-214, Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2004, San Francisco, CA, United States, 4/13/04.
Kim HC, David Theodore N, Mayer JW, Alford T. Thermal stability and electrical properties of Ag(Al) metallization. In Carter RJ, Hau-Riege CS, Kloster GM, Lu T-M, Schulz SE, editors, Materials Research Society Symposium Proceedings. Vol. 812. 2004. p. 209-214
Kim, Hyunchul C. ; David Theodore, N. ; Mayer, James W. ; Alford, Terry. / Thermal stability and electrical properties of Ag(Al) metallization. Materials Research Society Symposium Proceedings. editor / R.J. Carter ; C.S. Hau-Riege ; G.M. Kloster ; T.-M. Lu ; S.E. Schulz. Vol. 812 2004. pp. 209-214
@inproceedings{25b7d648bc2a4423962fbcd0aae44f7e,
title = "Thermal stability and electrical properties of Ag(Al) metallization",
abstract = "The thermal stability and electrical resistivity of Ag(Al) alloy thin films on SiO 2 are investigated and compared to pure Ag thin films by performing various analyses: Rutherford backscattering spectrometry (RBS), X-ray diffractometry (XRD), transmission electron microscopy (TEM), and four-point probe. The susceptibility to agglomeration of Ag on SiO 2 layer is a drawback of Ag metallization. Ag(Al) thin films show good thermal stability on SiO 2 layer without any diffusion barrier. The films are stable up to 600°C for 1 hour in vacuum. Electrical resistivity of as-deposited Ag (5 at {\%} Al) thin film is slightly higher than that of pure Ag thin film. However, the resistivity of Ag(Al) samples annealed at high temperatures (up to 600°C for 1 hour in vacuum) remains constant due to the improvement of thermal stability (large reduction of agglomeration). This finding can impact metallization for thin film transistors (TFT) for displays, including flexible displays, and high-speed electronics due to lower resistivity value compared to Cu thin film.",
author = "Kim, {Hyunchul C.} and {David Theodore}, N. and Mayer, {James W.} and Terry Alford",
year = "2004",
language = "English (US)",
volume = "812",
pages = "209--214",
editor = "R.J. Carter and C.S. Hau-Riege and G.M. Kloster and T.-M. Lu and S.E. Schulz",
booktitle = "Materials Research Society Symposium Proceedings",

}

TY - GEN

T1 - Thermal stability and electrical properties of Ag(Al) metallization

AU - Kim, Hyunchul C.

AU - David Theodore, N.

AU - Mayer, James W.

AU - Alford, Terry

PY - 2004

Y1 - 2004

N2 - The thermal stability and electrical resistivity of Ag(Al) alloy thin films on SiO 2 are investigated and compared to pure Ag thin films by performing various analyses: Rutherford backscattering spectrometry (RBS), X-ray diffractometry (XRD), transmission electron microscopy (TEM), and four-point probe. The susceptibility to agglomeration of Ag on SiO 2 layer is a drawback of Ag metallization. Ag(Al) thin films show good thermal stability on SiO 2 layer without any diffusion barrier. The films are stable up to 600°C for 1 hour in vacuum. Electrical resistivity of as-deposited Ag (5 at % Al) thin film is slightly higher than that of pure Ag thin film. However, the resistivity of Ag(Al) samples annealed at high temperatures (up to 600°C for 1 hour in vacuum) remains constant due to the improvement of thermal stability (large reduction of agglomeration). This finding can impact metallization for thin film transistors (TFT) for displays, including flexible displays, and high-speed electronics due to lower resistivity value compared to Cu thin film.

AB - The thermal stability and electrical resistivity of Ag(Al) alloy thin films on SiO 2 are investigated and compared to pure Ag thin films by performing various analyses: Rutherford backscattering spectrometry (RBS), X-ray diffractometry (XRD), transmission electron microscopy (TEM), and four-point probe. The susceptibility to agglomeration of Ag on SiO 2 layer is a drawback of Ag metallization. Ag(Al) thin films show good thermal stability on SiO 2 layer without any diffusion barrier. The films are stable up to 600°C for 1 hour in vacuum. Electrical resistivity of as-deposited Ag (5 at % Al) thin film is slightly higher than that of pure Ag thin film. However, the resistivity of Ag(Al) samples annealed at high temperatures (up to 600°C for 1 hour in vacuum) remains constant due to the improvement of thermal stability (large reduction of agglomeration). This finding can impact metallization for thin film transistors (TFT) for displays, including flexible displays, and high-speed electronics due to lower resistivity value compared to Cu thin film.

UR - http://www.scopus.com/inward/record.url?scp=12844267444&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=12844267444&partnerID=8YFLogxK

M3 - Conference contribution

VL - 812

SP - 209

EP - 214

BT - Materials Research Society Symposium Proceedings

A2 - Carter, R.J.

A2 - Hau-Riege, C.S.

A2 - Kloster, G.M.

A2 - Lu, T.-M.

A2 - Schulz, S.E.

ER -