Abstract

The temperature dependence of the lattice parameter of Ge1-y Sny alloys deposited on Si substrates has been determined from an analysis of their x-ray reciprocal-space maps. It is found that over the range 0<y<0.03 the alloy thermal expansivity increases by up to 20% as a function of y. This implies a strong deviation from a linear interpolation between the end compounds since the thermal expansivities of pure Ge and α-Sn are nearly the same. Alternative interpolation formulas based on a Debye model and a mixed Debye-Einstein model of the phonon structure are tested and it is found that they also fail to explain the observed increase in thermal expansivity.

Original languageEnglish (US)
Article number245214
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume81
Issue number24
DOIs
StatePublished - Jun 29 2010

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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