Abstract

In this paper we summarize our research work on electro-thermal modeling of different generations of fully-depleted SOI devices. We first discuss our electro-thermal device simulator that self-consistently couples the Monte Carlo solver for the electrons with the energy balance solver for acoustic and optical phonons. Afterwards we discuss simulation results for different technology fully-depleted SOI devices.

Original languageEnglish (US)
Title of host publicationECS Transactions - Microelectronics Technology and Devices - SBMicro 2009
Pages337-344
Number of pages8
Edition1
DOIs
StatePublished - Dec 1 2009
Event24th International Symposium on Microelectronics Technology and Devices - SBMicro 2009 - Natal, Brazil
Duration: Aug 31 2009Sep 3 2009

Publication series

NameECS Transactions
Number1
Volume23
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other24th International Symposium on Microelectronics Technology and Devices - SBMicro 2009
CountryBrazil
CityNatal
Period8/31/099/3/09

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Vasileska, D., Raleva, K., & Goodnick, S. (2009). Thermal effects in fully-depleted SOI devices. In ECS Transactions - Microelectronics Technology and Devices - SBMicro 2009 (1 ed., pp. 337-344). (ECS Transactions; Vol. 23, No. 1). https://doi.org/10.1149/13183737