The formation and annihilation behaviors of thermal donors in 16O+-, 18O+-, or 16O ++12C+-implanted float-zone silicon have been investigated with secondary ion mass spectrometry, spreading resistance probe, Hall effect, and transmission electron microscopy. Various oxygen or carbon+oxygen-implanted samples were laser annealed to remove implant damage and subjected to furnace annealing at 450°C for up to 100 h to activate oxygen-related thermal donors. Oxygen concentrations at the peak of the implanted profiles exceed the maximum for Czochralski Si by an order of magnitude. It is found that the third to fourth power dependence of thermal donor formation on oxygen generally observed for Czochralski Si does not hold for the higher oxygen concentration in the implanted layer. Annihilation characteristics of thermal donors formed in the oxygen implanted layers were investigated by the rapid thermal annealing technique. A rapid thermal anneal at 1150°C for 30 s was required to remove all the thermal donors. Based upon the annihilation kinetics data, it is tentatively concluded that both old and new thermal donors exist in the oxygen-implanted layer. For carbon+oxygen- coimplanted samples, the data have shown that carbon greatly increases the new thermal donor concentration in the implanted layer. Finally, precipitate morphologies for both oxygen-only- and carbon+oxygen-coimplanted samples after a 450°C furnace annealing were investigated by high resolution electron microscopy. In the case of oxygen-implant-only samples, predominant precipitate morphologies are needlelike while platelet defects predominate for carbon+oxygen-coimplanted samples. Since carbon increases the formation rate of new thermal donors, it is unlikely that they are distinctly related to needlelike precipitates as claimed in previous studies.
ASJC Scopus subject areas
- Physics and Astronomy(all)