Thermal degradation of semiconductor qubit inverter operation in narrow band-gap materials

M. J. Gilbert, R. Akis, D. K. Ferry

Research output: Contribution to journalConference articlepeer-review

Abstract

Recently, quantum computing has received a great deal of focus as a possible means of achieving rapid computational speeds when compared with that of classical computation. Nonetheless, in many of the current implementations of a "quantum computer", the semiconductor platform has been largely overlooked. It has been previously demonstrated that it is possible to form the NOT gate in a coupled semiconductor waveguide structure in III-V materials. However, to this point, investigations have not included the effects of non-zero temperature on the system. It is crucial to determine what effect temperature has on the system. We present results of a semiconductor waveguide inverter in GaAs and InAs with non-zero thermal effects included in the simulation. The behavior of the device clearly shows that with the inclusion of thermal effects in these materials, waveguide NOT gate function is still possible. Nevertheless, care must be taken when selecting the operational values of the inverter as shifts in the I-V curves occur which could cause unwanted operation of the inverter.

Original languageEnglish (US)
Pages (from-to)251-256
Number of pages6
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume19
Issue number1-2
DOIs
StatePublished - Jul 1 2003
EventFourth International Symposium on Nanostructures and Mesoscopi - Tempe, AZ, United States
Duration: Feb 17 2003Feb 21 2003

Keywords

  • Quantum computing
  • Qubit
  • Thermal effects
  • Waveguide inverter

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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