Thermal conductivity of silicon nanowire arrays with controlled roughness

Joseph P. Feser, Jyothi S. Sadhu, Bruno Azeredo, Keng H. Hsu, Jun Ma, Junhwan Kim, Myunghoon Seong, Nicholas X. Fang, Xiuling Li, Placid M. Ferreira, Sanjiv Sinha, David G. Cahill

Research output: Contribution to journalArticle

88 Citations (Scopus)

Abstract

A two-step metal assisted chemical etching technique is used to systematically vary the sidewall roughness of Si nanowires in vertically aligned arrays. The thermal conductivities of nanowire arrays are studied using time domain thermoreflectance and compared to their high-resolution transmission electron microscopy determined roughness. The thermal conductivity of nanowires with small roughness is close to a theoretical prediction based on an upper limit of the mean-free-paths of phonons given by the nanowire diameter. The thermal conductivity of nanowires with large roughness is found to be significantly below this prediction. Raman spectroscopy reveals that nanowires with large roughness also display significant broadening of the one-phonon peak; the broadening correlates well with the reduction in thermal conductivity. The origin of this broadening is not yet understood, as it is inconsistent with phonon confinement models, but could derive from microstructural changes that affect both the optical phonons observed in Raman scattering and the acoustic phonons that are important for heat conduction.

Original languageEnglish (US)
Article number114306
JournalJournal of Applied Physics
Volume112
Issue number11
DOIs
StatePublished - Dec 1 2012
Externally publishedYes

Fingerprint

nanowires
roughness
thermal conductivity
silicon
phonons
predictions
conductive heat transfer
mean free path
Raman spectroscopy
etching
Raman spectra
transmission electron microscopy
acoustics
high resolution
metals

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Feser, J. P., Sadhu, J. S., Azeredo, B., Hsu, K. H., Ma, J., Kim, J., ... Cahill, D. G. (2012). Thermal conductivity of silicon nanowire arrays with controlled roughness. Journal of Applied Physics, 112(11), [114306]. https://doi.org/10.1063/1.4767456

Thermal conductivity of silicon nanowire arrays with controlled roughness. / Feser, Joseph P.; Sadhu, Jyothi S.; Azeredo, Bruno; Hsu, Keng H.; Ma, Jun; Kim, Junhwan; Seong, Myunghoon; Fang, Nicholas X.; Li, Xiuling; Ferreira, Placid M.; Sinha, Sanjiv; Cahill, David G.

In: Journal of Applied Physics, Vol. 112, No. 11, 114306, 01.12.2012.

Research output: Contribution to journalArticle

Feser, JP, Sadhu, JS, Azeredo, B, Hsu, KH, Ma, J, Kim, J, Seong, M, Fang, NX, Li, X, Ferreira, PM, Sinha, S & Cahill, DG 2012, 'Thermal conductivity of silicon nanowire arrays with controlled roughness', Journal of Applied Physics, vol. 112, no. 11, 114306. https://doi.org/10.1063/1.4767456
Feser, Joseph P. ; Sadhu, Jyothi S. ; Azeredo, Bruno ; Hsu, Keng H. ; Ma, Jun ; Kim, Junhwan ; Seong, Myunghoon ; Fang, Nicholas X. ; Li, Xiuling ; Ferreira, Placid M. ; Sinha, Sanjiv ; Cahill, David G. / Thermal conductivity of silicon nanowire arrays with controlled roughness. In: Journal of Applied Physics. 2012 ; Vol. 112, No. 11.
@article{4f37e62b7ad949ae95189b77d1a2538e,
title = "Thermal conductivity of silicon nanowire arrays with controlled roughness",
abstract = "A two-step metal assisted chemical etching technique is used to systematically vary the sidewall roughness of Si nanowires in vertically aligned arrays. The thermal conductivities of nanowire arrays are studied using time domain thermoreflectance and compared to their high-resolution transmission electron microscopy determined roughness. The thermal conductivity of nanowires with small roughness is close to a theoretical prediction based on an upper limit of the mean-free-paths of phonons given by the nanowire diameter. The thermal conductivity of nanowires with large roughness is found to be significantly below this prediction. Raman spectroscopy reveals that nanowires with large roughness also display significant broadening of the one-phonon peak; the broadening correlates well with the reduction in thermal conductivity. The origin of this broadening is not yet understood, as it is inconsistent with phonon confinement models, but could derive from microstructural changes that affect both the optical phonons observed in Raman scattering and the acoustic phonons that are important for heat conduction.",
author = "Feser, {Joseph P.} and Sadhu, {Jyothi S.} and Bruno Azeredo and Hsu, {Keng H.} and Jun Ma and Junhwan Kim and Myunghoon Seong and Fang, {Nicholas X.} and Xiuling Li and Ferreira, {Placid M.} and Sanjiv Sinha and Cahill, {David G.}",
year = "2012",
month = "12",
day = "1",
doi = "10.1063/1.4767456",
language = "English (US)",
volume = "112",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - Thermal conductivity of silicon nanowire arrays with controlled roughness

AU - Feser, Joseph P.

AU - Sadhu, Jyothi S.

AU - Azeredo, Bruno

AU - Hsu, Keng H.

AU - Ma, Jun

AU - Kim, Junhwan

AU - Seong, Myunghoon

AU - Fang, Nicholas X.

AU - Li, Xiuling

AU - Ferreira, Placid M.

AU - Sinha, Sanjiv

AU - Cahill, David G.

PY - 2012/12/1

Y1 - 2012/12/1

N2 - A two-step metal assisted chemical etching technique is used to systematically vary the sidewall roughness of Si nanowires in vertically aligned arrays. The thermal conductivities of nanowire arrays are studied using time domain thermoreflectance and compared to their high-resolution transmission electron microscopy determined roughness. The thermal conductivity of nanowires with small roughness is close to a theoretical prediction based on an upper limit of the mean-free-paths of phonons given by the nanowire diameter. The thermal conductivity of nanowires with large roughness is found to be significantly below this prediction. Raman spectroscopy reveals that nanowires with large roughness also display significant broadening of the one-phonon peak; the broadening correlates well with the reduction in thermal conductivity. The origin of this broadening is not yet understood, as it is inconsistent with phonon confinement models, but could derive from microstructural changes that affect both the optical phonons observed in Raman scattering and the acoustic phonons that are important for heat conduction.

AB - A two-step metal assisted chemical etching technique is used to systematically vary the sidewall roughness of Si nanowires in vertically aligned arrays. The thermal conductivities of nanowire arrays are studied using time domain thermoreflectance and compared to their high-resolution transmission electron microscopy determined roughness. The thermal conductivity of nanowires with small roughness is close to a theoretical prediction based on an upper limit of the mean-free-paths of phonons given by the nanowire diameter. The thermal conductivity of nanowires with large roughness is found to be significantly below this prediction. Raman spectroscopy reveals that nanowires with large roughness also display significant broadening of the one-phonon peak; the broadening correlates well with the reduction in thermal conductivity. The origin of this broadening is not yet understood, as it is inconsistent with phonon confinement models, but could derive from microstructural changes that affect both the optical phonons observed in Raman scattering and the acoustic phonons that are important for heat conduction.

UR - http://www.scopus.com/inward/record.url?scp=84871189399&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84871189399&partnerID=8YFLogxK

U2 - 10.1063/1.4767456

DO - 10.1063/1.4767456

M3 - Article

VL - 112

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

M1 - 114306

ER -