Thermal characteristics of 1.3μm GaAsSb/GaAs-based edge- and surface-emitting lasers

S. J. Sweeney, K. Hild, I. P. Marko, S. Q. Yu, Shane Johnson, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Under ambient conditions, the temperature sensitivity of 1.3μm GaAsSb lasers is limited by non-radiative current losses. These are shown to be a critical design consideration for producing temperature insensitive VCSEL operation around room temperature.

Original languageEnglish (US)
Title of host publication21st IEEE International Semiconductor Laser Conference, ISLC 2008
Pages83-84
Number of pages2
DOIs
StatePublished - Dec 1 2008
Event21st IEEE International Semiconductor Laser Conference, ISLC 2008 - Sorrento, Italy
Duration: Sep 14 2008Sep 18 2008

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)0899-9406

Other

Other21st IEEE International Semiconductor Laser Conference, ISLC 2008
CountryItaly
CitySorrento
Period9/14/089/18/08

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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