Theory of the electronic density of states of amorphous tetrahedrally bonded semiconductors

D. Weaire, M. F. Thorpe, V. Heine

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

Recent progress in the analysis of the properties of a simple tight binding Hamiltonian, appropriate to the study of the role of topological disorder in determining properties of amorphous semiconductors, is reviewed. The band structure generated by such a Hamiltonian for the diamond cubic structure is compared with a more realistic calculation for Ge.

Original languageEnglish (US)
Pages (from-to)128-133
Number of pages6
JournalJournal of Non-Crystalline Solids
Volume8-10
Issue numberC
DOIs
StatePublished - Jun 1972

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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