Theory of the electronic density of states of amorphous tetrahedrally bonded semiconductors

D. Weaire, Michael Thorpe, V. Heine

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Recent progress in the analysis of the properties of a simple tight binding Hamiltonian, appropriate to the study of the role of topological disorder in determining properties of amorphous semiconductors, is reviewed. The band structure generated by such a Hamiltonian for the diamond cubic structure is compared with a more realistic calculation for Ge.

Original languageEnglish (US)
Pages (from-to)128-133
Number of pages6
JournalJournal of Non-Crystalline Solids
Volume8-10
Issue numberC
DOIs
StatePublished - 1972
Externally publishedYes

Fingerprint

Hamiltonians
Electronic density of states
Semiconductor materials
Amorphous semiconductors
amorphous semiconductors
Diamond
electronics
Band structure
Diamonds
diamonds
disorders

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Theory of the electronic density of states of amorphous tetrahedrally bonded semiconductors. / Weaire, D.; Thorpe, Michael; Heine, V.

In: Journal of Non-Crystalline Solids, Vol. 8-10, No. C, 1972, p. 128-133.

Research output: Contribution to journalArticle

Weaire, D. ; Thorpe, Michael ; Heine, V. / Theory of the electronic density of states of amorphous tetrahedrally bonded semiconductors. In: Journal of Non-Crystalline Solids. 1972 ; Vol. 8-10, No. C. pp. 128-133.
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