Abstract
A comprehensive time-resolved electronic Raman scattering theory for nonequilibrium carrier excitations in semiconductors is presented. The following are simultaneously taken into account: (i) the effects of the ultrashort laser pulse for probing the excited carrier distribution function; (ii) the fact that the fluctuation-dissipation theorem is not valid under conditions of nonequilibrium carrier distributions; (iii) the effects of quasiparticle life time via a finite collision time in the Raman scattering cross section; and (iv) the effect of the time-dependent resonant enhancement factor due to the band structure. The single-particle scattering spectra for spin-density fluctuation contribution is found to be significantly broadened by an ultrashort laser pulse, but is substantially narrowed by the finite collision time. The effect of the time-dependent resonant enhancement factor has been demonstrated to broaden the line shape of single-particle scattering spectra for the spin-density fluctuation contribution as the probe photon energy increases.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 4325-4335 |
| Number of pages | 11 |
| Journal | Journal of Applied Physics |
| Volume | 72 |
| Issue number | 9 |
| DOIs | |
| State | Published - 1992 |
ASJC Scopus subject areas
- Physics and Astronomy(all)