Theoretical investigation of silicon nanowire ph sensor

Alireza Kargar, Jennifer Blain Christen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

In this paper, Si nanowire (NW) sensor in pH detection is presented. The conductance of device is analytically obtained and demonstrated the conductance increases with reducing the oxide thickness. To calculate the electrical conductance of sensor, the diffusion-drift model and nonlinear Poisson-Boltzmann equation are used. To improve the conductance a Si NW sensor with nanoscale side gate voltage is presented and its conductance is theoretically achieved. It is shown the conductance and consequently sensor sensitivity can be enhanced by adding suitable side gate voltage. Finally this effect is compared to the almost similar fabricated structure in literature which has a wire with rectangular cross section.

Original languageEnglish (US)
Title of host publicationProceedings of the 2nd Biennial IEEE/RAS-EMBS International Conference on Biomedical Robotics and Biomechatronics, BioRob 2008
Pages765-769
Number of pages5
DOIs
StatePublished - 2008
Event2nd Biennial IEEE/RAS-EMBS International Conference on Biomedical Robotics and Biomechatronics, BioRob 2008 - Scottsdale, AZ, United States
Duration: Oct 19 2008Oct 22 2008

Publication series

NameProceedings of the 2nd Biennial IEEE/RAS-EMBS International Conference on Biomedical Robotics and Biomechatronics, BioRob 2008

Other

Other2nd Biennial IEEE/RAS-EMBS International Conference on Biomedical Robotics and Biomechatronics, BioRob 2008
Country/TerritoryUnited States
CityScottsdale, AZ
Period10/19/0810/22/08

Keywords

  • Conductance change
  • NW sensor
  • Side gate voltage
  • pH detection

ASJC Scopus subject areas

  • Artificial Intelligence
  • Computer Vision and Pattern Recognition
  • Biomedical Engineering

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