Theoretical evidence of spontaneous spin polarization in GaAs/AlGaAs split-gate heterostructures

Ashwin Ashok; Richard Akis; Dragica Vasileska; David K. Ferry

doi:10.1007/s10825-005-7122-9

Theoretical evidence of spontaneous spin polarization in GaAs/AlGaAs split-gate heterostructures

Ashwin Ashok, Richard Akis, Dragica Vasileska, David K. Ferry

Research output: Contribution to journal › Article › peer-review

Abstract

The spontaneous spin polarization of a quantum point contact (QPC) formed by the lateral confinement of a high-mobility two-dimensional electron gas in a GaAs/AlGaAs heterostructure is investigated. We present self consistent calculations of the electronic structure of the QPC using the spin-polarized density functional formalism of Kohn and Sham. Spin polarization occurs at low electron densities and exchange potential is found to be the dominant mechanism driving the local polarization within the QPC. We compute the conductance using the cascading scattering matrix approach and observe the conductance anomaly at ∼0.7 (2e²/h).

Original language	English (US)
Pages (from-to)	125-128
Number of pages	4
Journal	Journal of Computational Electronics
Volume	4
Issue number	1-2
DOIs	https://doi.org/10.1007/s10825-005-7122-9
State	Published - Apr 1 2005

Keywords

0.7 anomaly
2DEG
Exchange potential
Quantum point contact

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Modeling and Simulation
Electrical and Electronic Engineering

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10.1007/s10825-005-7122-9

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title = "Theoretical evidence of spontaneous spin polarization in GaAs/AlGaAs split-gate heterostructures",

abstract = "The spontaneous spin polarization of a quantum point contact (QPC) formed by the lateral confinement of a high-mobility two-dimensional electron gas in a GaAs/AlGaAs heterostructure is investigated. We present self consistent calculations of the electronic structure of the QPC using the spin-polarized density functional formalism of Kohn and Sham. Spin polarization occurs at low electron densities and exchange potential is found to be the dominant mechanism driving the local polarization within the QPC. We compute the conductance using the cascading scattering matrix approach and observe the conductance anomaly at ∼0.7 (2e2/h).",

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author = "Ashwin Ashok and Richard Akis and Dragica Vasileska and Ferry, {David K.}",

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T1 - Theoretical evidence of spontaneous spin polarization in GaAs/AlGaAs split-gate heterostructures

AU - Ashok, Ashwin

AU - Akis, Richard

AU - Vasileska, Dragica

AU - Ferry, David K.

PY - 2005/4/1

Y1 - 2005/4/1

N2 - The spontaneous spin polarization of a quantum point contact (QPC) formed by the lateral confinement of a high-mobility two-dimensional electron gas in a GaAs/AlGaAs heterostructure is investigated. We present self consistent calculations of the electronic structure of the QPC using the spin-polarized density functional formalism of Kohn and Sham. Spin polarization occurs at low electron densities and exchange potential is found to be the dominant mechanism driving the local polarization within the QPC. We compute the conductance using the cascading scattering matrix approach and observe the conductance anomaly at ∼0.7 (2e2/h).

AB - The spontaneous spin polarization of a quantum point contact (QPC) formed by the lateral confinement of a high-mobility two-dimensional electron gas in a GaAs/AlGaAs heterostructure is investigated. We present self consistent calculations of the electronic structure of the QPC using the spin-polarized density functional formalism of Kohn and Sham. Spin polarization occurs at low electron densities and exchange potential is found to be the dominant mechanism driving the local polarization within the QPC. We compute the conductance using the cascading scattering matrix approach and observe the conductance anomaly at ∼0.7 (2e2/h).

KW - 0.7 anomaly

KW - 2DEG

KW - Exchange potential

KW - Quantum point contact

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JF - Journal of Computational Electronics

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ER -

Theoretical evidence of spontaneous spin polarization in GaAs/AlGaAs split-gate heterostructures

Abstract

Keywords

ASJC Scopus subject areas

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