Theoretical evidence of spontaneous spin polarization in GaAs/AlGaAs split-gate heterostructures

Ashwin Ashok, Richard Akis, Dragica Vasileska, David K. Ferry

Research output: Contribution to journalArticle

Abstract

The spontaneous spin polarization of a quantum point contact (QPC) formed by the lateral confinement of a high-mobility two-dimensional electron gas in a GaAs/AlGaAs heterostructure is investigated. We present self consistent calculations of the electronic structure of the QPC using the spin-polarized density functional formalism of Kohn and Sham. Spin polarization occurs at low electron densities and exchange potential is found to be the dominant mechanism driving the local polarization within the QPC. We compute the conductance using the cascading scattering matrix approach and observe the conductance anomaly at ∼0.7 (2e2/h).

Original languageEnglish (US)
Pages (from-to)125-128
Number of pages4
JournalJournal of Computational Electronics
Volume4
Issue number1-2
DOIs
StatePublished - Apr 2005

Fingerprint

Spin Polarization
Spin polarization
Heterostructures
Point contacts
Gallium Arsenide
aluminum gallium arsenides
Heterojunctions
Contact
Conductance
polarization
Electron
Two dimensional electron gas
Scattering Matrix
Electronic Structure
S matrix theory
Density Functional
Anomaly
Electronic structure
Carrier concentration
electron gas

Keywords

  • 0.7 anomaly
  • 2DEG
  • Exchange potential
  • Quantum point contact

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering

Cite this

Theoretical evidence of spontaneous spin polarization in GaAs/AlGaAs split-gate heterostructures. / Ashok, Ashwin; Akis, Richard; Vasileska, Dragica; Ferry, David K.

In: Journal of Computational Electronics, Vol. 4, No. 1-2, 04.2005, p. 125-128.

Research output: Contribution to journalArticle

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