TY - JOUR
T1 - The use of oxynitrides for the fabrication of buried contact silicon solar cells
AU - Ebong, A. U.
AU - Taouk, M.
AU - Honsberg, C. B.
AU - Wenham, S. R.
N1 - Funding Information:
The support of the Australian Research Council and the Energy Research and Development Council is gratefully acknowledged. The Centre for Photovoltaic Devices and Systems is supported by the Australian Research Council and Pacific Power. Dr. Paul Pigram and Mr. Nguyen Than Trong of The Surface Science and Technology Centre, School of Chemistry, University of New South Wales are also gratefully acknowledge for their assistance with the XPS measurements. AUE is very grateful to the Australian International Development Assistance Bureau (AIDAB) for their sponsorship.
PY - 1996/4
Y1 - 1996/4
N2 - The formation of an oxynitride layer for use with solar cells has been demonstrated using simple equipment designed and assembled by the authors. The oxynitride has been successfully incorporated into the double sided buried contact silicon solar cells sequence, solving the fabrication difficulties associated with the use of an oxide masking layer. The output parameters, particularly the open-circuit voltage, are lower than those demonstrated by the use of a thick silicon dioxide film when working with conventional cell structures. This has been attributed to the inferior surface passivation qualities of the oxynitride. However, the oxynitride films are suitable for other devices like the multi-layer thin crystalline silicon buried contact structure [40].
AB - The formation of an oxynitride layer for use with solar cells has been demonstrated using simple equipment designed and assembled by the authors. The oxynitride has been successfully incorporated into the double sided buried contact silicon solar cells sequence, solving the fabrication difficulties associated with the use of an oxide masking layer. The output parameters, particularly the open-circuit voltage, are lower than those demonstrated by the use of a thick silicon dioxide film when working with conventional cell structures. This has been attributed to the inferior surface passivation qualities of the oxynitride. However, the oxynitride films are suitable for other devices like the multi-layer thin crystalline silicon buried contact structure [40].
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U2 - 10.1016/0927-0248(95)00086-0
DO - 10.1016/0927-0248(95)00086-0
M3 - Article
AN - SCOPUS:0030124532
SN - 0927-0248
VL - 40
SP - 183
EP - 195
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
IS - 2
ER -