@article{f88351af75524d8eb4545b78cab03b44,
title = "The use of electron-beam lithography for localized micro-beam irradiations",
abstract = "A controlled microbeam facility based on electron-beam lithography is demonstrated as a means of observing total dose induced compensation effects on circuit parameters and understanding degradation mechanisms. The system uses electron-beam lithography techniques to perform on-chip microbeam irradiations on individual transistors or sub-circuits without any irradiation of the neighboring transistors. An experimental validation of the mechanisms proposed to explain the sensitivity of the input current of the LM139 as an illustration of this technique is provided",
keywords = "Bipolar microcircuit, circuit-effect, compensation, dose, electron-beam lithography, localized irradiation",
author = "Y. Gonzalez-Velo and J. Boch and F. Pichot and J. Mekki and Roche, {N. J.H.} and S. P{\'e}rez and C. Deneau and Vaille, {J. R.} and L. Dusseau and F. Saign{\'e} and E. Lorf{\`e}vre and Schrimpf, {R. D.}",
note = "Funding Information: Manuscript received September 17, 2010; revised December 07, 2010; accepted December 21, 2010. Date of publication April 25, 2011; date of current version June 15, 2011. This work was supported in part by the Agence Nationale de la Recherche, ANR, and in part by the Centre National d{\textquoteright}Etudes Spatiales, CNES. Y. Gonzalez-Velo, J. Boch, J. Mekki, N. J.-H. Roche, S. P{\'e}rez, C. Deneau, L. Dusseau, and F. Saign{\'e} are with the Universit{\'e} Montpellier 2, F-34095 Mont-pellier cedex 5, France (e-mail: yago.gonzalez@ies.univ-montp2.fr). F. Pichot is with Centrale de Technologie en Micro et Nano{\'e}lectronique, CTM Universit{\'e} Montpellier 2, F-34095 Montpellier cedex 5, France. J.-R. Vaill{\'e} is with IES UMR 5214 and Universit{\'e} de N{\^i}mes, 30021 N{\^i}mes Cedex 01, France. E. Lorf{\`e}vre is with the Centre National d{\textquoteright}Etudes Spatiales, F-31401 Toulouse cedex 9, France. R. D. Schrimpf is with Vanderbilt University, Nashville, TN 37235 USA. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TNS.2011.2128885 Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",
year = "2011",
month = jun,
doi = "10.1109/TNS.2011.2128885",
language = "English (US)",
volume = "58",
pages = "1104--1111",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3 PART 2",
}