The use of a dose-rate switching technique to characterize bipolar devices

Jérôme Boch, Yago Gonzalez Velo, Frédéric Saigné, Nicolas J.H. Roche, Ronald D. Schrimpf, Jean Roch Vaillé, Laurent Dusseau, Christian Chatry, Eric Lorfèvre, Robert Ecoffet, Antoine D. Touboul

Research output: Contribution to journalArticle

27 Scopus citations

Abstract

The enhanced radiation sensitivity exhibited at low dose rate by many bipolar devices remains one of the main concerns for spacecraft reliability. As an accelerated test technique, a new approach based on dose-rate switching experiments has been proposed to characterize bipolar devices. The foundations of this approach are detailed and guidelines for its use are given.

Original languageEnglish (US)
Article number5341412
Pages (from-to)3347-3353
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume56
Issue number6
DOIs
StatePublished - Dec 1 2009

Keywords

  • Accelerated test method
  • Dose rate
  • Integrated circuits
  • Switching experiments
  • Total dose

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Boch, J., Velo, Y. G., Saigné, F., Roche, N. J. H., Schrimpf, R. D., Vaillé, J. R., Dusseau, L., Chatry, C., Lorfèvre, E., Ecoffet, R., & Touboul, A. D. (2009). The use of a dose-rate switching technique to characterize bipolar devices. IEEE Transactions on Nuclear Science, 56(6), 3347-3353. [5341412]. https://doi.org/10.1109/TNS.2009.2033686