Abstract

Ultrashort gate length pseudomorphic high-electron-mobility transistors (p-HEMTs) based on an InP substrate have been modeled using a full-band Cellular Monte Carlo simulator. The RF response has been obtained for lithographic gate lengths ranging from 10 nm to 50 nm and for channel thicknesses of 18 and 10 nm. These results in turn have been used in a transit time analysis to determine the effective gate length in each case. By interpolation, one can make an estimate of the absolute upper limit for the cut-off frequency, fT, which we find to be 2.9 THz in 18 nm device and 3.1 THz in the 10 nm device.

Original languageEnglish (US)
Title of host publication2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
DOIs
StatePublished - Dec 1 2008
Event2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 - Versailles, France
Duration: May 25 2008May 29 2008

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Other

Other2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
CountryFrance
CityVersailles
Period5/25/085/29/08

Keywords

  • Effective gate length
  • Millimeter wave transistors
  • Monte Carlo methods
  • Pseudomorphic HEMTs

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Akis, R., Faralli, N., Ferry, D. K., Goodnick, S., Saraniti, M., & Ayubi-Moak, J. S. (2008). The upper limits of cut-off frequency in ultra-short gate length inp-based p-hemts. In 2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 [4702917] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2008.4702917