TY - GEN
T1 - The upper limits of cut-off frequency in ultra-short gate length inp-based p-hemts
AU - Akis, R.
AU - Faralli, N.
AU - Ferry, D. K.
AU - Goodnick, Stephen
AU - Saraniti, Marco
AU - Ayubi-Moak, J. S.
N1 - Funding Information:
The author acknowledges the support of King Fahd University of Petroleum & Minerals (KFUPM), Dhahran, Saudi Arabia, for this work through project # SB121010.
PY - 2008
Y1 - 2008
N2 - Ultrashort gate length pseudomorphic high-electron-mobility transistors (p-HEMTs) based on an InP substrate have been modeled using a full-band Cellular Monte Carlo simulator. The RF response has been obtained for lithographic gate lengths ranging from 10 nm to 50 nm and for channel thicknesses of 18 and 10 nm. These results in turn have been used in a transit time analysis to determine the effective gate length in each case. By interpolation, one can make an estimate of the absolute upper limit for the cut-off frequency, fT, which we find to be 2.9 THz in 18 nm device and 3.1 THz in the 10 nm device.
AB - Ultrashort gate length pseudomorphic high-electron-mobility transistors (p-HEMTs) based on an InP substrate have been modeled using a full-band Cellular Monte Carlo simulator. The RF response has been obtained for lithographic gate lengths ranging from 10 nm to 50 nm and for channel thicknesses of 18 and 10 nm. These results in turn have been used in a transit time analysis to determine the effective gate length in each case. By interpolation, one can make an estimate of the absolute upper limit for the cut-off frequency, fT, which we find to be 2.9 THz in 18 nm device and 3.1 THz in the 10 nm device.
KW - Effective gate length
KW - Millimeter wave transistors
KW - Monte Carlo methods
KW - Pseudomorphic HEMTs
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U2 - 10.1109/ICIPRM.2008.4702917
DO - 10.1109/ICIPRM.2008.4702917
M3 - Conference contribution
AN - SCOPUS:70149123299
SN - 9781424422593
T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
BT - 2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
T2 - 2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
Y2 - 25 May 2008 through 29 May 2008
ER -