Abstract

Ultrashort gate length pseudomorphic high-electron-mobility transistors (p-HEMTs) based on an InP substrate have been modeled using a full-band Cellular Monte Carlo simulator. The RF response has been obtained for lithographic gate lengths ranging from 10 nm to 50 nm and for channel thicknesses of 18 and 10 nm. These results in turn have been used in a transit time analysis to determine the effective gate length in each case. By interpolation, one can make an estimate of the absolute upper limit for the cut-off frequency, fT, which we find to be 2.9 THz in 18 nm device and 3.1 THz in the 10 nm device.

Original languageEnglish (US)
Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
DOIs
StatePublished - 2008
Event2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 - Versailles, France
Duration: May 25 2008May 29 2008

Other

Other2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
CountryFrance
CityVersailles
Period5/25/085/29/08

Fingerprint

Cutoff frequency
High electron mobility transistors
Interpolation
Simulators
Substrates

Keywords

  • Effective gate length
  • Millimeter wave transistors
  • Monte Carlo methods
  • Pseudomorphic HEMTs

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Akis, R., Faralli, N., Ferry, D. K., Goodnick, S., Saraniti, M., & Ayubi-Moak, J. S. (2008). The upper limits of cut-off frequency in ultra-short gate length inp-based p-hemts. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials [4702917] https://doi.org/10.1109/ICIPRM.2008.4702917

The upper limits of cut-off frequency in ultra-short gate length inp-based p-hemts. / Akis, R.; Faralli, N.; Ferry, D. K.; Goodnick, Stephen; Saraniti, Marco; Ayubi-Moak, J. S.

Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2008. 4702917.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Akis, R, Faralli, N, Ferry, DK, Goodnick, S, Saraniti, M & Ayubi-Moak, JS 2008, The upper limits of cut-off frequency in ultra-short gate length inp-based p-hemts. in Conference Proceedings - International Conference on Indium Phosphide and Related Materials., 4702917, 2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008, Versailles, France, 5/25/08. https://doi.org/10.1109/ICIPRM.2008.4702917
Akis R, Faralli N, Ferry DK, Goodnick S, Saraniti M, Ayubi-Moak JS. The upper limits of cut-off frequency in ultra-short gate length inp-based p-hemts. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2008. 4702917 https://doi.org/10.1109/ICIPRM.2008.4702917
Akis, R. ; Faralli, N. ; Ferry, D. K. ; Goodnick, Stephen ; Saraniti, Marco ; Ayubi-Moak, J. S. / The upper limits of cut-off frequency in ultra-short gate length inp-based p-hemts. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2008.
@inproceedings{c91e035fa87841568607ba19c3900301,
title = "The upper limits of cut-off frequency in ultra-short gate length inp-based p-hemts",
abstract = "Ultrashort gate length pseudomorphic high-electron-mobility transistors (p-HEMTs) based on an InP substrate have been modeled using a full-band Cellular Monte Carlo simulator. The RF response has been obtained for lithographic gate lengths ranging from 10 nm to 50 nm and for channel thicknesses of 18 and 10 nm. These results in turn have been used in a transit time analysis to determine the effective gate length in each case. By interpolation, one can make an estimate of the absolute upper limit for the cut-off frequency, fT, which we find to be 2.9 THz in 18 nm device and 3.1 THz in the 10 nm device.",
keywords = "Effective gate length, Millimeter wave transistors, Monte Carlo methods, Pseudomorphic HEMTs",
author = "R. Akis and N. Faralli and Ferry, {D. K.} and Stephen Goodnick and Marco Saraniti and Ayubi-Moak, {J. S.}",
year = "2008",
doi = "10.1109/ICIPRM.2008.4702917",
language = "English (US)",
isbn = "9781424422593",
booktitle = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

}

TY - GEN

T1 - The upper limits of cut-off frequency in ultra-short gate length inp-based p-hemts

AU - Akis, R.

AU - Faralli, N.

AU - Ferry, D. K.

AU - Goodnick, Stephen

AU - Saraniti, Marco

AU - Ayubi-Moak, J. S.

PY - 2008

Y1 - 2008

N2 - Ultrashort gate length pseudomorphic high-electron-mobility transistors (p-HEMTs) based on an InP substrate have been modeled using a full-band Cellular Monte Carlo simulator. The RF response has been obtained for lithographic gate lengths ranging from 10 nm to 50 nm and for channel thicknesses of 18 and 10 nm. These results in turn have been used in a transit time analysis to determine the effective gate length in each case. By interpolation, one can make an estimate of the absolute upper limit for the cut-off frequency, fT, which we find to be 2.9 THz in 18 nm device and 3.1 THz in the 10 nm device.

AB - Ultrashort gate length pseudomorphic high-electron-mobility transistors (p-HEMTs) based on an InP substrate have been modeled using a full-band Cellular Monte Carlo simulator. The RF response has been obtained for lithographic gate lengths ranging from 10 nm to 50 nm and for channel thicknesses of 18 and 10 nm. These results in turn have been used in a transit time analysis to determine the effective gate length in each case. By interpolation, one can make an estimate of the absolute upper limit for the cut-off frequency, fT, which we find to be 2.9 THz in 18 nm device and 3.1 THz in the 10 nm device.

KW - Effective gate length

KW - Millimeter wave transistors

KW - Monte Carlo methods

KW - Pseudomorphic HEMTs

UR - http://www.scopus.com/inward/record.url?scp=70149123299&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70149123299&partnerID=8YFLogxK

U2 - 10.1109/ICIPRM.2008.4702917

DO - 10.1109/ICIPRM.2008.4702917

M3 - Conference contribution

SN - 9781424422593

BT - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

ER -